Gate Control of Light Emitting and Lasing Thyristors

9523729 光电器件工作新原理的发展对于现代光电集成电路、光计算和光通信系统是一个非常重要的问题。III-V族直接带隙PnpN类晶闸管结构目前被用作高效的光可击穿功率器件、光放大器、动态光电存储器以及二端和三端光电开关。制造技术的进步导致了类晶闸管器件参数的显著改善，这反过来又导致了新的光电应用。我们提出的使用中间不完全关断制度构成了一个新的原则，它可以从根本上扩展这些潜在的光电计算和光纤通信系统的关键组件的功能能力。 拟议的研究旨在利用不完全关断制度的门控发光和激光晶闸管的光强度调制和开关的目的。在这种情况下，中间p-n结的一部分被反向偏置并阻挡电流，而结构的其余部分是高度导电和发光的。可以使用小的栅极信号来控制发光区域的大小和该区域中的光强度。此外，栅极使得可以控制发光区域的位置。 这些特征允许减少光电子开关的切换时间，并创建用于发射强度和逻辑电路的高频调制的新型光学器件。在所提出的操作机制的载流子去除是完全基于电场的影响，是完全免费的复合寿命的限制，这定义了传统的操作机制的速度。 本课题的目标是研制一种新型的多功能光电器件。这项研究将基于门控发光器件和激光器的计算机模拟。 本文模拟了部分关断光闸中电子空穴等离子体的稳态和非稳态压缩，研究了压缩效应对光辐射参量的影响。将确定有效控制光功率和减少开关时间的最佳条件。 ***

9523729 Mitin The development of new principles of optoelectronic device operation is a problem of great importance for modern optoelectronic integrated circuits, optical computing and optical communication systems. III-V direct band gap PnpN thyristor-like structures are currently used as efficient light-triggerable power devices, optical amplifiers, dynamic optoelectronic memories, and two- and three-terminal optoelectronic switches. Progress in fabrication technology has led to a significant improvement of the parameters of thyristor-like devices, which in turn has led to new optoelectronic applications. Our proposed use of the intermediate incomplete turn-off regime constitutes a new principle, which can essentially extend functional capabilities of these potentially key components of optoelectronic computing and optical-fiber communication systems. The proposed research is aimed at utilizing the incomplete turn-off regime of gate controlled light-emitting and lasing thyristors for modulation of light intensity and switching purposes. In this regime a part of the middle p-n junction is reverse biased and blocks the current, while the remaining part of the structure is highly conducting and light-emitting. The size of the light-emitting area and the light intensity in this region can be controlled using small gate signals. Moreover, gates make it possible to control the position of the light emitting region. These features allow decreased switching times of optoelectronic switches and the creation of new types of optical devices for the high-frequency modulation of emission intensity and logic circuits. In the proposed regime of operation the mechanism of carrier removal is based solely on the effects of the electric field, and is completely free of recombination lifetime limitations, which define the speed of conventional operation regimes. The goal of this project is to develop a new type of multifunctional optoelectronic device. The research will be based on a computer simulation of gate-controlled light-emitting devices and lasers. Simulation of stationary and nonstationary squeezing of electron-hole plasma in partially turned-off optothyristors will be carried out, to investigate squeezing effects on the parameters of light radiation. Optimum conditions for effective control of light power and decreasing of switching times will be determined. ***