Gate Control of Light Emitting and Lasing Thyristors

发光和激光晶闸管的栅极控制

基本信息

  • 批准号:
    9523729
  • 负责人:
  • 金额:
    $ 30.55万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    1996
  • 资助国家:
    美国
  • 起止时间:
    1996-10-01 至 2000-09-30
  • 项目状态:
    已结题

项目摘要

9523729 Mitin The development of new principles of optoelectronic device operation is a problem of great importance for modern optoelectronic integrated circuits, optical computing and optical communication systems. III-V direct band gap PnpN thyristor-like structures are currently used as efficient light-triggerable power devices, optical amplifiers, dynamic optoelectronic memories, and two- and three-terminal optoelectronic switches. Progress in fabrication technology has led to a significant improvement of the parameters of thyristor-like devices, which in turn has led to new optoelectronic applications. Our proposed use of the intermediate incomplete turn-off regime constitutes a new principle, which can essentially extend functional capabilities of these potentially key components of optoelectronic computing and optical-fiber communication systems. The proposed research is aimed at utilizing the incomplete turn-off regime of gate controlled light-emitting and lasing thyristors for modulation of light intensity and switching purposes. In this regime a part of the middle p-n junction is reverse biased and blocks the current, while the remaining part of the structure is highly conducting and light-emitting. The size of the light-emitting area and the light intensity in this region can be controlled using small gate signals. Moreover, gates make it possible to control the position of the light emitting region. These features allow decreased switching times of optoelectronic switches and the creation of new types of optical devices for the high-frequency modulation of emission intensity and logic circuits. In the proposed regime of operation the mechanism of carrier removal is based solely on the effects of the electric field, and is completely free of recombination lifetime limitations, which define the speed of conventional operation regimes. The goal of this project is to develop a new type of multifunctional optoelectronic device. The research will be based on a computer simulation of gate-controlled light-emitting devices and lasers. Simulation of stationary and nonstationary squeezing of electron-hole plasma in partially turned-off optothyristors will be carried out, to investigate squeezing effects on the parameters of light radiation. Optimum conditions for effective control of light power and decreasing of switching times will be determined. ***
9523729 光电器件工作新原理的发展对于现代光电集成电路、光计算和光通信系统是一个非常重要的问题。III-V族直接带隙PnpN类晶闸管结构目前被用作高效的光可击穿功率器件、光放大器、动态光电存储器以及二端和三端光电开关。制造技术的进步导致了类晶闸管器件参数的显著改善,这反过来又导致了新的光电应用。我们提出的使用中间不完全关断制度构成了一个新的原则,它可以从根本上扩展这些潜在的光电计算和光纤通信系统的关键组件的功能能力。 拟议的研究旨在利用不完全关断制度的门控发光和激光晶闸管的光强度调制和开关的目的。在这种情况下,中间p-n结的一部分被反向偏置并阻挡电流,而结构的其余部分是高度导电和发光的。可以使用小的栅极信号来控制发光区域的大小和该区域中的光强度。此外,栅极使得可以控制发光区域的位置。 这些特征允许减少光电子开关的切换时间,并创建用于发射强度和逻辑电路的高频调制的新型光学器件。在所提出的操作机制的载流子去除是完全基于电场的影响,是完全免费的复合寿命的限制,这定义了传统的操作机制的速度。 本课题的目标是研制一种新型的多功能光电器件。这项研究将基于门控发光器件和激光器的计算机模拟。 本文模拟了部分关断光闸中电子空穴等离子体的稳态和非稳态压缩,研究了压缩效应对光辐射参量的影响。将确定有效控制光功率和减少开关时间的最佳条件。 ***

项目成果

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Vladimir Mitin其他文献

Circuital modeling and physical understanding of dissipation effects for coupled resonator filters transformed into transversal array configuration
耦合谐振器滤波器转化为横向阵列配置的耗散效应的电路建模和物理理解
Effect of selective doping on characteristics of graphene-van der Waals heterostructure terahertz and infrared detectors
选择性掺杂对石墨烯-范德华异质结太赫兹和红外探测器特性的影响
グラフェンにおけるテラヘルツ二次元プラズモンのシミュレーションによる解析
石墨烯中太赫兹二维等离子体激元的模拟分析
  • DOI:
  • 发表时间:
    2013
  • 期刊:
  • 影响因子:
    0
  • 作者:
    佐藤昭,Victor Ryzhii;Vladimir Mitin;Fedir Vasko,尾辻泰一
  • 通讯作者:
    Fedir Vasko,尾辻泰一
Discovery of Coulomb-Drag Instability of Graphene Dirac Plasmons
石墨烯狄拉克等离子体激元库仑阻力不稳定性的发现
Optically and electrically pumped graphene bilayer lasers : Dramatic enhancement of terahertz gain by remote doping
光泵浦和电泵浦石墨烯双层激光器:通过远程掺杂显着增强太赫兹增益

Vladimir Mitin的其他文献

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{{ truncateString('Vladimir Mitin', 18)}}的其他基金

Synergy of Educational Tools for Teaching Electromagnetic Fields and Waves: Lab Experiments, Educational Java Applets, Numerical Modeling, Textbook with Power Point Presentations
电磁场和波教学教育工具的协同作用:实验室实验、教育性 Java 小程序、数值建模、带有 Power Point 演示的教科书
  • 批准号:
    1140718
  • 财政年份:
    2012
  • 资助金额:
    $ 30.55万
  • 项目类别:
    Standard Grant
Interdisciplinary Nanoelectronics Laboratory for the Engineering/Science Undergraduate Curriculum
工程/科学本科课程跨学科纳米电子学实验室
  • 批准号:
    0536541
  • 财政年份:
    2006
  • 资助金额:
    $ 30.55万
  • 项目类别:
    Standard Grant
NUE: Introduction to Nanoelectronics
NUE:纳米电子学概论
  • 批准号:
    0407246
  • 财政年份:
    2004
  • 资助金额:
    $ 30.55万
  • 项目类别:
    Standard Grant
Terahertz Microwave Generation in dc-Biased Heterostructure Ballistic Devices
直流偏置异质结构弹道装置中产生太赫兹微波
  • 批准号:
    0344609
  • 财政年份:
    2003
  • 资助金额:
    $ 30.55万
  • 项目类别:
    Continuing Grant
Terahertz Microwave Generation in dc-Biased Heterostructure Ballistic Devices
直流偏置异质结构弹道装置中产生太赫兹微波
  • 批准号:
    0099913
  • 财政年份:
    2001
  • 资助金额:
    $ 30.55万
  • 项目类别:
    Continuing Grant
NER: Quantum Nanosensors Based on Controllable Electron-Phonon Coupling
NER:基于可控电子声子耦合的量子纳米传感器
  • 批准号:
    0103072
  • 财政年份:
    2001
  • 资助金额:
    $ 30.55万
  • 项目类别:
    Standard Grant
TETRAHERTZ MICROWAVE GENERATORS: Heterostructure Ballistic Negative Effective Mass Generator for Tetrahertz Range
四赫兹微波发生器:用于太赫兹范围的异质结构弹道负有效质量发生器
  • 批准号:
    9813823
  • 财政年份:
    2000
  • 资助金额:
    $ 30.55万
  • 项目类别:
    Standard Grant
Terahertz Microwave Generators from Submicron n+ -n-n+ Diodes
亚微米 n -n-n 二极管太赫兹微波发生器
  • 批准号:
    9526112
  • 财政年份:
    1996
  • 资助金额:
    $ 30.55万
  • 项目类别:
    Standard Grant
Noise in a Two Dimensional Electron Gas
二维电子气中的噪声
  • 批准号:
    9110705
  • 财政年份:
    1991
  • 资助金额:
    $ 30.55万
  • 项目类别:
    Standard Grant

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