Spectroscopy of Semiconductor Growth Intermediates

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In this project in the Experimental Physical Chemistry Program of the Chemistry Division, Clouthier will develop sensitive spectroscopic methods for detecting and characterizing reactive intermediates important in semiconductor processing. The approach will use free-jet expansions of intermediates generated by pyrolysis, discharge, or chemical reaction whose spectra will be examined using laser-induced fluorescence (LIF) or resonance-enhanced multiphoton ionization (REMPI). Among the intermediates studied will be germanium and silicon analogues of halocarbenes, aluminum- and gallium-containing metal organic chemical vapor deposition (MOCVD) intermediates, and sulfur-halide radicals. Chemical vapor deposition and plasma processing are two techniques used for manufacturing electronic devices in the semiconductor industry. The spectroscopic information from this work will aid in the understanding of these processes and point the way to better and more methods.