SBIR Phase I: Interfacial Engineering for Advanced Solid State Electronic Devices

这个小企业创新研究第一阶段项目的重点是通过接口工程开发更好的压敏电阻。对更好的压敏电阻的需求源于这样一个事实，即几乎所有的电子设备都受到来自集成电路集成、开关或静电放电的噪声和高压浪涌的影响。这些浪涌和噪声会严重影响电气和电子设备的性能。基于金属氧化物的压敏电阻通常用于最小化这个问题。然而，目前的金属氧化物压敏电阻器件技术并不适合快速响应、低电压和高频应用。本项目旨在直接努力纠正这一问题。提出的技术方法是利用具有非常大界面面积的材料合成和制造压敏电阻。由此产生的压敏电阻器预计将显着更小，更轻，但具有更高的非线性系数，更低的泄漏电流和更高的临界电场值。这些优点来自于界面面积的增加、均匀性、密度的增加和潜在的量子限制效应。在第一阶段，将建立概念验证。第二阶段将开发、优化和现场测试压敏电阻，第三阶段将进行器件的商业化。所提出的压敏电阻技术可以在不牺牲电子元件性能的情况下实现系统小型化。应用包括用于保护集成lsi， ic，电信设备，电力和传输管理的压敏电阻，以及用于显着提高能源和汽车电子可靠性的设备。

95-60712 Yadav This Small Business Innovation Research Phase I project focuses on developing significantly better varistors by the engineering of interfaces. The need for better varistors originates from the fact that almost all electronic devices are subject to noise and high voltage surges from IC integration, switching or electrostatic discharge. These surges and noises can severely affect the performance of electrical and electronic devices. Varistors based on metal oxides are commonly used to minimize this problem. However, current metal oxide varistor device technology is not well suited for rapid response, low voltages and high frequency applications. This program seeks to direct efforts to remedy this. The proposed technical approach is to synthesize and fabricate varistors from materials with very large interfacial area. The resultant varistors are expected to be dramatically smaller, lighter, and yet feature higher non-linear coefficient, lower leakage current, and higher critical electric field values. These advantages are expected from increased interfacial area, homogeneity, increased density, and potential quantum confinement effects. During Phase I, the proof-of-concept will be established. Phase II will develop, optimize and field test the varistors, and commercialization of the devices will occur during Phase III. Proposed varistor technology can enable system miniaturization without sacrificing electronic component performance. Applications include varistors for protecting integrated LSIs, ICs, telecommunications equipment, electric power and transmission management, and for devices to dramatically improve reliability of energy and automotive electronics.