Acquisition of Advanced Equipment for Rapid Thermal and High Density Plasma Processing for Integrated Circuits and Flat Panel Displays

采购集成电路和平板显示器快速热和高密度等离子体处理的先进设备

• 批准号: 9601835
• 负责人: Miltiadis Hatalis
• 金额: $ 13万
• 依托单位: Lehigh University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-09-01 至 1999-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9601835&HistoricalAwards=false
• 关键词: Acquisition; Advanced; Equipment; Rapid; Thermal

9601835 Hatalis The rapid thermal annealing (RTA) system will enable the formation of ultrathin gate insulators for CMOS transistors, multi-dielectric nonvolatile semiconductor memory devices and promote the development of a new technology for novel silicon carbide MOS devices especially the so-called MCT or MOS Controlled Thyristors. New silicide contact metallurgy, and rapid crystallization of amorphous silicon films will be explored for both silicon ICs and TFT based flat panel displays. Furthermore the new RTA system will provide us with critical control of the device dimensions during the implant activation anneals which is essential for the realization of our new nanoelectronic devices. The ICP high density plasma reactor will be used in the development of new materials and new deposition processes for both IC and flat panel display applications. Such materials and processes will include: low dielectric constant fluorocarbon films as intermetal dielectric material, high quality amorphous silicon and silicon dioxide films deposited at high rates for IC and flat panel display applications, and novel plasma hydrogenation, oxidation and nitridation processes for single crystal silicon, polysilicon and compound semiconductor devices. A rapid thermal processing system and an inductively-coupled high density plasma (ICP) deposition system will be purchased in order to enable advanced research and training at Lehigh University on the following microelectronics areas: a)silicon integrated circuits ,b) compound semiconductor microwave devices, and c) thin film transistor flat panel displays. The equipment will enhance the education of students by exposing them to the fundamental s and applications of new singly wafer processing approaches.

快速热退火（RTA）系统将使CMOS晶体管、多介质非易失性半导体存储器件的超薄栅极绝缘体的形成成为可能，并促进新型碳化硅MOS器件特别是所谓的MCT或MOS控制晶闸管的新技术的发展。新的硅化接触冶金和非晶硅薄膜的快速结晶将被用于硅集成电路和基于TFT的平板显示器。此外，新的RTA系统将在植入激活退火期间为我们提供对器件尺寸的关键控制，这对于实现我们的新型纳米电子器件至关重要。ICP高密度等离子体反应器将用于IC和平板显示应用的新材料和新沉积工艺的开发。这些材料和工艺将包括：低介电常数氟碳薄膜作为金属间介电材料，高质量的非晶硅和二氧化硅薄膜以高速率沉积用于集成电路和平板显示应用，以及用于单晶硅，多晶硅和化合物半导体器件的新型等离子体氢化，氧化和氮化工艺。为了使里海大学在以下微电子领域进行先进的研究和培训：A)硅集成电路，b)化合物半导体微波器件，c)薄膜晶体管平板显示器，将购买一个快速热处理系统和一个电感耦合高密度等离子体（ICP）沉积系统。该设备将提高学生的教育，使他们接触到新的单晶圆加工方法的基础和应用。