Micromechanical Study of Failure in Narrow Interconnect Lines

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9610536 Cuitino Semiconductor devises, such as static and dynamic random access memory, use thin metal interconnect lines. Future devices are anticipated to use even thinner interconnects. The effect of microstructural features, such as grain misorientation, grain size distribution, grain morphology, size and morphology of microdefects, as well as of other factors including, deposition temperature, usage temperature, electric current density, on nucleation and growth of voids in narrow interconnects is studies. crystal creep theory based on dislocation mechanics is employed as the central tool for this investigation. The study will also be applicable in other areas such as the design and fabrication of single crystal propellers, turbine blades, etc. ***