Stable Wavelength Strained Quantum Wire Lasers

稳定波长应变量子线激光器

• 批准号: 9617153
• 负责人: Keh-Yung Cheng
• 金额: $ 26万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-07-15 至 2000-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9617153&HistoricalAwards=false
• 关键词: Stable; Wavelength; Strained; Quantum; Wire

29617153 Cheng The goals of the proposed research are to develop technologies in the fields of epitaxial growth of strained quantum wire (QWR) structures by molecular beam epitaxy (MBE), multi-axial strain engineering, and computer modeling of low dimensional strained structures based on efficient band-structure models to make possible the fabrication of wavelength stable semiconductor lasers for optical fiber communication and information applications. Specifically, we plan to fabricate wavelength stable 1.55 (mGaxInl-xAs/InP and 0.98 (m GaxInl-xAsyP1-y/GaAs lasers which employ strained QWR active regions formed in situ by the strain induced lateral-layer ordering (SILO) process during MBE growth. The stable wavelength results from a unique multi-axial strain generated in the QWR region by the SILO process. It is expected that by using this multi-axial strain technique within a QWR structure, new quantum and optical effects will be observed which will in turn lead to novel devices with new functions and/or improved performance. It is our vision that the completion of this research should lead to 1) new insight into innovative growth methods, 2) knowledge and control of multi-axial strain engineering, 3) an understanding of new physical effects in strained quantum wire structures and devices, 4) the development of new efficient modeling techniques, and 5) the physical realization of novel strained quantum wire lasers and devices with improved performance characteristics. ***

29617153 Cheng拟议研究的目标是开发通过分子束外延（MBE）外延生长应变量子线（QWR）结构，多轴应变工程，和基于有效能带的低维应变结构的计算机建模，结构模型，使波长稳定的半导体激光器的光纤通信和信息应用的制造成为可能。 具体来说，我们计划制造波长稳定的1.55 μ m GaxInl-xAs/InP和0.98 μ m GaxInl-xAsyP 1-y/GaAs激光器，这些激光器采用MBE生长期间通过应变诱导侧向层有序（筒仓）过程原位形成的应变QWR有源区。 稳定的波长来自于由筒仓过程在QWR区域中产生的独特的多轴应变。 预期通过在QWR结构内使用这种多轴应变技术，将观察到新的量子和光学效应，这反过来将导致具有新功能和/或改进性能的新型器件。 我们的愿景是，这项研究的完成应该导致1）对创新生长方法的新见解，2）多轴应变工程的知识和控制，3）对应变量子线结构和器件中新物理效应的理解，4）新的高效建模技术的发展，以及5）物理实现具有改进的性能特征的新型应变量子线激光器和器件。 ***