High Pressure Magneto-Optical Studies of Novel Localized States in Compound Semiconductors and their Heterostructures

化合物半导体及其异质结构中新型局域态的高压磁光研究

• 批准号: 9624029
• 负责人: Bernard Weinstein
• 金额: $ 40.18万
• 依托单位: SUNY at Buffalo
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-05-01 至 2000-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9624029&HistoricalAwards=false
• 关键词: Pressure; Magneto; Optical; Studies; Novel

9624029 Weinstein The program investigates the effect of high hydrostatic pressure on the energy and competition of shallow (hydrogenic) and deep impurity states in III-V semiconductors and heterostructures, as well as on the possible occurrence and properties of stable excitonic states in these systems. The work will involve far infrared (FIR) magneto-spectroscopy and near infrared/visible optical experiments carried out using a unique diamondanvil apparatus that achieves in-situ tuning of pressure, temperature and magnetic field over the ranges 0150 kbar, 2300K and 0-17T. The approach will permit direct comparison of spectroscopic results recorded over a wide range of energies from the FIR to the visible on the same samples under the same conditions, which has not heretofore been possible. Such studies should yield (1) a much clearer picture of the competition between shallow and deep (both stable and metastable) impurity states in semiconductors for many different substitutional species, (2) should help establish the carrier density dependence of many-body effects in doped aluminumgallium arsenide/gallium-arsenide quantum well structures, and (3) should enable the exploration of conditions and properties for possible stable excitonic ground states in indium-arsenide/aluminium- gallium-antimony systems. %%% The program investigates the effect of high hydrostatic pressure on the energy and competition of shallow (hydrogenic) and deep impurity states in III-V semiconductors and hererostructures, as well as on the possible occurrence and properties of stable excitonic states in these systems. The work will involve far infrared (FIR) magneto- spectroscopy and near infrared/visible optical experiments carried out using a unique diamond-anvil apparatus that achieves in-situ tuning of pressure, temperature and magneti c field over the ranges 0- 150 kbar, 2-300K and 0-17T. The approach will permit direct comparison of spectroscopic results recorded over a wide range of energies from te far-infra-red to the visible. The experiments will be conducted on the same samples under the same conditions, which has not heretofore been possible. Such studies should yield: (1) a much clearer picture of the competition between shallow and deep (both stable and metastable) impurity states in semiconductors for many different substitutional species, (2) should help establish the carrier density dependence of many-body effects in doped aluminum- gallium-arsenide quantum well structures, and (3) should enable the exploration of conditions and properties for possible stable excitionic ground states in indium-arsenide/aluminium-gallium- antimony systems.***

小行星9624029 的 程序 研究了高静水压力对 III-V族半导体和异质结构中浅（类氢）和深杂质态的能量和竞争，以及这些系统中稳定激子态的可能出现和性质。这项工作将涉及远红外（FIR）磁光谱和近红外/可见光光学实验进行 出来 使用 一个独特 金刚石 装置 在0150 kbar、2300 K和0- 17 T的范围内实现了压力、温度和磁场的原位调谐。 的方法 将允许直接比较在相同条件下在相同样品上从FIR到可见光的宽能量范围内记录的光谱结果，这在此之前是不可能的。 这样的研究应该产生（1）一个更清晰的画面， 浅与浅之间的竞争 深（两者） 稳定 和亚稳态）杂质状态 不同的替代物种，（2）应该有助于建立 的载流子密度 掺杂多体效应相关性 砷化铝镓/砷化镓量子阱结构，以及（3）应当能够 的 探索 的 条件 与性能 在砷化铟/铝-镓-锑系统中可能的稳定激子基态。 该计划研究了高静水压力对III-V族半导体和hererostructures中浅（类氢）和深杂质态的能量和竞争的影响，以及这些系统中稳定激子态的可能发生和性质。 该工作将涉及使用独特的金刚石压砧装置进行的远红外（FIR）磁光谱和近红外/可见光光学实验，该装置可在0- 150 kbar、2- 300 K和0- 17 T范围内实现压力、温度和磁场的原位调节。 该方法将允许直接比较的光谱结果记录在广泛的能量范围从远红外线到可见光。 实验将在相同的条件下对相同的样品进行，这在以前是不可能的。 这些研究应产生：（1）对于许多不同的替代物种，半导体中浅和深（稳定和亚稳）杂质态之间的竞争的更清晰的图像，（2）应该有助于建立掺杂的砷化铝-镓量子阱结构中的多体效应的载流子密度依赖性，以及（3）应该能够探索 的条件和性质， 稳定激子 地面 国 在砷化铟/铝镓锑系统中。