High Pressure Magneto-Optical Studies of Novel Localized States in Compound Semiconductors and their Heterostructures

该程序研究了高静水压力对III-V型半导体和异质结构中浅层（含氢）和深层杂质态能量和竞争的影响，以及对这些系统中稳定激子态可能出现和性质的影响。这项工作将涉及远红外（FIR）磁光谱学和近红外/可见光实验，使用一种独特的金刚石仪器来实现在0150 kbar， 2300K和0-17T范围内的压力，温度和磁场的原位调谐。该方法将允许在相同条件下对相同样品从FIR到可见光的广泛能量范围内记录的光谱结果进行直接比较，这在以前是不可能的。这样的研究将产生(1)更清晰地描绘出半导体中许多不同取代物质在浅层和深层（稳定和亚稳）杂质态之间的竞争，(2)应该有助于建立掺杂砷化铝镓/砷化镓量子阱结构中多体效应的载流子密度依赖关系。(3)应该能够探索砷化铟/铝镓锑系统中可能稳定的激子基态的条件和性质。该程序研究了高静水压力对III-V型半导体和异质结构中浅层（含氢）和深层杂质态能量和竞争的影响，以及对这些系统中稳定激子态可能出现和性质的影响。这项工作将涉及远红外（FIR）磁光谱学和近红外/可见光光学实验，使用一种独特的钻石砧装置，在0- 150kbar， 2-300K和0- 17t范围内实现压力，温度和磁场的原位调谐。这种方法将允许在从远红外到可见光的广泛能量范围内记录的光谱结果进行直接比较。实验将在相同的条件下对相同的样品进行，这在以前是不可能的。这些研究应产生：(1)对半导体中许多不同取代物质的浅层和深层（稳定和亚稳）杂质态之间的竞争有了更清晰的认识；(2)应该有助于建立掺杂铝镓砷量子阱结构中多体效应对载流子密度的依赖性；(3)应该能够探索砷化铟/铝镓锑体系中可能稳定激发态的条件和性质

9624029 Weinstein The program investigates the effect of high hydrostatic pressure on the energy and competition of shallow (hydrogenic) and deep impurity states in III-V semiconductors and heterostructures, as well as on the possible occurrence and properties of stable excitonic states in these systems. The work will involve far infrared (FIR) magneto-spectroscopy and near infrared/visible optical experiments carried out using a unique diamondanvil apparatus that achieves in-situ tuning of pressure, temperature and magnetic field over the ranges 0150 kbar, 2300K and 0-17T. The approach will permit direct comparison of spectroscopic results recorded over a wide range of energies from the FIR to the visible on the same samples under the same conditions, which has not heretofore been possible. Such studies should yield (1) a much clearer picture of the competition between shallow and deep (both stable and metastable) impurity states in semiconductors for many different substitutional species, (2) should help establish the carrier density dependence of many-body effects in doped aluminumgallium arsenide/gallium-arsenide quantum well structures, and (3) should enable the exploration of conditions and properties for possible stable excitonic ground states in indium-arsenide/aluminium- gallium-antimony systems. %%% The program investigates the effect of high hydrostatic pressure on the energy and competition of shallow (hydrogenic) and deep impurity states in III-V semiconductors and hererostructures, as well as on the possible occurrence and properties of stable excitonic states in these systems. The work will involve far infrared (FIR) magneto- spectroscopy and near infrared/visible optical experiments carried out using a unique diamond-anvil apparatus that achieves in-situ tuning of pressure, temperature and magneti c field over the ranges 0- 150 kbar, 2-300K and 0-17T. The approach will permit direct comparison of spectroscopic results recorded over a wide range of energies from te far-infra-red to the visible. The experiments will be conducted on the same samples under the same conditions, which has not heretofore been possible. Such studies should yield: (1) a much clearer picture of the competition between shallow and deep (both stable and metastable) impurity states in semiconductors for many different substitutional species, (2) should help establish the carrier density dependence of many-body effects in doped aluminum- gallium-arsenide quantum well structures, and (3) should enable the exploration of conditions and properties for possible stable excitionic ground states in indium-arsenide/aluminium-gallium- antimony systems.***