Novel Structural Studies of Adsorption and Heteroepitaxy on Semiconductors

半导体吸附和异质外延的新结构研究

• 批准号: 9632593
• 负责人: Michael Bedzyk
• 金额: $ 36.43万
• 依托单位: Northwestern University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-07-15 至 2000-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9632593&HistoricalAwards=false
• 关键词: Novel; Structural; Studies; Adsorption; Heteroepitaxy

9632593 Bedzyk This research project addresses critical aspects of heteroepitaxial growth of semiconductor structures including effects of strain, surfactants(growth related adsorbates including dopants), and alteration of surface kinetic phenomena through surfactant species. The approach employs the x-ray standing wave(XSW) technique utilizing advanced light sources at national facilities along with more conventional surface science techniques at Northwestern to focus on the structure, adsorption, and transformation kinetics of growth-related species on the surface of a growing, strained heterolayer. In-situ studies undertaken will center on the molecular beam epitaxy of elements from groups IV-IV on silicon and germanium substrates. The high resolution XSW data will provide atomic positions within a strained overlayer with a precision of 0.01 Angstroms, and will be used as a stringent test of theoretical models and simulations. %%% The research will contribute basic materials science knowledge at a fundamental level of technological relevance to several aspects of advanced electronic/photonic devices and integrated circuitry. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

9632593 Bedzyk本研究项目致力于半导体结构异质外延生长的关键方面，包括应变、表面活性剂(与生长相关的吸附物，包括掺杂剂)的影响，以及通过表面活性剂物种对表面动力学现象的改变。该方法采用X射线驻波(XSW)技术，利用国家设施的先进光源和西北大学更传统的表面科学技术，重点研究生长相关物质在生长、应变异质层表面的结构、吸附和转化动力学。开展的现场研究将集中在硅和锗衬底上第四至第四族元素的分子束外延。高分辨率的XSW数据将提供应变覆盖层内的原子位置，精度为0.01埃，并将被用作理论模型和模拟的严格测试。这项研究将在与先进电子/光子器件和集成电路的几个方面相关的基础技术层面上贡献基本的材料科学知识。此外，从这项研究项目中获得的知识和理解有望通过为设计和生产改进的材料和材料组合提供基本的理解和基础，从而在总体上为提高先进器件和电路的性能做出贡献。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训，将研究和教育结合起来。***