Chemical Control of Recombination at Semiconductor Interfaces

这个项目，在分析和表面化学程序的支持下，专注于表征半导体/液体界面在硅表面通过共价键连接部分直接到硅没有介入氧化物桥创建。 Nathan S.加州理工学院化学系的刘易斯和他的学生将采用伏安法、微波电导率和微分电容法来表征这些界面的电子转移和光化学性质，这些界面并不因氧化物桥的存在而复杂。 该项目旨在了解如何在这些改性硅半导体/液体界面控制电子转移的基本原理。 硅是构造半导体器件的基本构件。 尽管其在此类应用中的常见用途，但其电子转移性质仍然知之甚少。 这个研究小组，由教授内森S。加州理工学院的刘易斯对理解半导体/液体界面的性质，如电子转移速率对距离的依赖性，做出了开创性的贡献。 该项目使用独特的化学方法来评估半导体/液体界面的这些特性。 该项目的实用性在于其在太阳能转换方面的许多实际应用潜力。

This project, supported in the Analytical and Surface Chemistry Program, focusses on characterizing semiconductor/liquid interfaces created at silicon surfaces by covalently attaching moieties directly to silicon without an intervening oxide bridge. Professor Nathan S. Lewis and his students of the Department of Chemistry at the California Institute of Technology will employ voltammetric, microwave conductivity, and differential capacitance methods to characterize the electron transfer and photochemical properties of these interfaces that are not complicated by the presence of an oxide bridge. This project aims to understand the fundamentals of how electron transfer can be controlled at these modified silicon semiconductor/liquid interfaces. Silicon is the fundamental building block for constructing semiconductor devices. Despite its common use for such applications its electron transfer properties remain poorly understood. This research group, led by Professor Nathan S. Lewis at the California Institute of Technology, is making seminal contributions to the understanding of the properties of semiconductor/liquid interfaces such as the dependence of electron transfer rate on distance. This project uses unique chemistry to assess such properties of the semiconductor/liquid interface. The utility of this project lies in its potential for many practical applications in solar energy conversion.