Achieving Molecular Level Control over the Chemical, Electrochemical, and Electrical Properties of Crystalline Si Surfaces
Achieving Molecular Level Control over the Chemical, Electrochemical, and Electrical Properties of Crystalline Si Surfaces
批准号:
0911682
负责人:
Nathan Lewis
金额:
$59.5万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2009
资助国家:
美国
项目状态:
已结题
起止时间:
2009-08-01 至 2013-07-31
中文摘要
点击翻译按钮获取中文摘要
英文摘要
This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5). The Analytical and Surface Chemistry (ASC) Program of the Division of Chemistry will support the research project of Prof. Nathan Lewis of California Institute of Technology (Caltech). Prof. Lewis and his students will develop a detailed understanding of the chemical reactivity of well-defined, planar Si surfaces and thereby form the basis for transferring this chemistry to more complex structures; explore and characterize mixed-alkyl monolayers on Si(111) to optimize their electrical properties while retaining the ability to perform further, desirable functionalization reactions; make well-defined, transparent Si/conductive polymer junctions having a variety of barrier heights; and study the fundamental aspects of self-assembly, thus developing methodologies that will enable the spontaneous organization of isotropic semiconductor rod suspensions into oriented electrode arrays. This research project involves manipulating the properties of Si and it is therefore of importance in technologies such as photovoltaics, photoelectrochemical cells, and to processes such as etching and lithography in which the chemistry of Si surfaces is heavily exploited. The project will provide excellent training opportunities to undergraduate students, graduate students and postdoctoral fellows who wish to specialize in a cutting edge research area of great relevance to national competitiveness in the renewable energy, information, and optical communications industries.
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Support of the Caltech Chemistry Animation Project
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Chemical Control of Recombination at Semiconductor Interfaces
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财政年份:1994
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Chemical Control of Recombination at Semiconductor Interfaces
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财政年份:1992
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依托单位:
Development of Computer Graphic Visualization Aids for the Undergraduate Chemistry Curriculum
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Chemical Control of Recombination at Semiconductor Interfaces
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The Chemistry of Recombination Sites at Semiconductor Interfaces (Chemistry)
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依托单位:
国内基金
海外基金
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