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Achieving Molecular Level Control over the Chemical, Electrochemical, and Electrical Properties of Crystalline Si Surfaces

Achieving Molecular Level Control over the Chemical, Electrochemical, and Electrical Properties of Crystalline Si Surfaces
实现对晶体硅表面化学、电化学和电学性质的分子水平控制
批准号:
0213589
负责人:
Nathan Lewis
金额:
$52.5万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2002
资助国家:
美国
项目状态:
已结题
起止时间:
2002-08-15 至 2006-07-31

项目摘要

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中文摘要
翻译
加州理工学院的内森·刘易斯教授是由分析和表面化学计划资助的,该计划的研究旨在通过强调硅表面化学来更好地控制硅基材料和设备的电气和物理性能。这些项目包括单晶硅表面的化学和电钝化反应,介孔硅光电极结构的电荷传输行为,以及硅基纳米管和纳米球的表征,以及有机/无机复合材料的形成。硅表面的化学修饰在分子电子学与半导体电路的接口、开发化学传感器、光电子器件以及光伏和光电化学电池方面具有重要意义。也许表面修饰可以愚弄廉价的多晶硅样品,使其具有目前使用的更昂贵的大单晶的电学和物理性能。
英文摘要
Professor Nathan Lewis of the California Institute of Technology is funded by the Analytical and Surface Chemistry Program for studies leading to better control of the electrical and physical properties of silicon-based materials and devices through an emphasis on silicon surface chemistry. The projects include chemical and electrical passivation reactions on single crystal silicon surfaces, charge transport behavior of structures obtained from mesoporous silicon photoelectrodes, as well as characterization of silicon-based nanotubes and nanospheres, and formation of organic/inorganic composites. Chemical modification of silicon surfaces is important in interfacing molecular electronics to semiconductor-based circuitry and developing chemical sensors, optoelectronic devices and photovoltaic and photoelectrochemical cells. Perhaps surface modification can fool inexpensive polycrystalline silicon samples into having electrical and physical properties of the more expensive large single crystals currently used.
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