A Micromechanical Model for Computing Dislocation Density and Viscoplastic Deformation in Semiconductor Single Crystals Grown from the Melt

9634573 Tsai基于认识到晶体缺陷对半导体单晶的使用寿命非常不利，建议的研究目标是建立一个非线性细观有限元模型来计算先进的III-V化合物半导体单晶中位错的增殖和运动。晶体生长过程中的热应力被认为是导致熔体中位错形成的主要因素，所提出的模型解决了这一问题和其他相关问题。这项研究将与美国国家航空航天局刘易斯的流体、热量和质量传输模型相结合，这是解决整体问题的非常好的方法。这项研究将为优化低密度半导体单晶的生长提供有用的数值工具，这对电子工业具有重要的意义。***

9634573 Tsai Based on the recognition that crystal defects are very detrimental to the service life of semiconductor single crystals, the objective of the proposed research is to develop a nonlinear micromechanical finite element model to calculate the multiplication and motion of dislocations in advanced III-V compound semiconductor single crystals. Thermal stress during crystal growth is identified as the chief factor in causing dislocations to form from the melt and the proposed model addresses this and other related issues. The study will be coupled with fluid, heat and mass transport models from NASA Lewis and this represents a very good approach to the overall problem. This research should provide a useful numeric tool for optimizing the growth of low density semiconductor single crystals which is very important to the electronics industry. ***