A Micromechanical Model for Computing Dislocation Density and Viscoplastic Deformation in Semiconductor Single Crystals Grown from the Melt

用于计算熔体生长的半导体单晶位错密度和粘塑性变形的微机械模型

• 批准号: 9634573
• 负责人: Chi-Tay Tsai
• 金额: $ 14.77万
• 依托单位: Florida Atlantic University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-01-01 至 2000-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9634573&HistoricalAwards=false
• 关键词: Micromechanical; Model; Computing; Dislocation; Density

9634573 Tsai Based on the recognition that crystal defects are very detrimental to the service life of semiconductor single crystals, the objective of the proposed research is to develop a nonlinear micromechanical finite element model to calculate the multiplication and motion of dislocations in advanced III-V compound semiconductor single crystals. Thermal stress during crystal growth is identified as the chief factor in causing dislocations to form from the melt and the proposed model addresses this and other related issues. The study will be coupled with fluid, heat and mass transport models from NASA Lewis and this represents a very good approach to the overall problem. This research should provide a useful numeric tool for optimizing the growth of low density semiconductor single crystals which is very important to the electronics industry. ***

基于认识到晶体缺陷对半导体单晶的使用寿命非常不利，提出的研究目标是建立一个非线性微力学有限元模型来计算先进III-V型化合物半导体单晶中位错的乘法和运动。晶体生长过程中的热应力被认为是导致熔体形成位错的主要因素，所提出的模型解决了这一问题和其他相关问题。这项研究将与美国宇航局刘易斯的流体、热量和质量传输模型相结合，这是解决整个问题的一个很好的方法。该研究为优化低密度半导体单晶的生长提供了一个有用的数值工具，这对电子工业具有重要意义。＊＊＊