SBIR Phase I: Rotating-Field Plasma Source for Semiconductor Device Processing

SBIR 第一阶段：用于半导体器件加工的旋转场等离子体源

• 批准号: 9660116
• 负责人: John Bayless
• 金额: $ 7.5万
• 依托单位: First Point Scientific, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-01-01 至 1997-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9660116&HistoricalAwards=false
• 关键词: SBIR; Phase; Rotating; Field; Plasma

*** 9660116 Bayless This Small Business Innovative Research Phase I project will provide a preliminary demonstration of the feasibility of a novel plasma source for advanced semiconductor processing. There is a major need for improved low pressure/high density plasma sources which are scaleable to large areas with precisely controlled and uniform plasma density profiles. The proposed Rotating-Field Plasma Source (RFPS) is a new type of source which is expected to meet the demanding requirements for etching and processing at feature sizes 0.5 m. The RFPS relies on a novel high-frequency rotating magnetic field drive concept to generate and shape the plasma density in a way that will not be affected by insertion of semiconductor wafers. It is expected to operate over a pressure range of O.1-lO mtorr with reactive gases. The specific objectives of Phase I are to: (1) design and assemble a Phase I RFPS feasibility experiment; (2) perform experiments to demonstrate plasma generation with controlled uniformity; and (3) develop the conceptual design for a laboratory prototype RFPS system to be operated in a commercial etching system in Phase II. A major dry etch equipment supplier has expressed great interest in the RFPS concept and will participate in Phase I. This project contributes to National Critical Technologies in the Microelectronics and Optoelectronics area. This project will provide a superior method for generating well controlled plasmas for a wide range of semiconductor materials processing applications. The RFPS advantages include: (1) scaleable to wafer diameters of 400 mm with good uniformity; (2) excellent controllability; and (3) low capitol and maintenance costs. This source will substantially enhance the competitiveness of the U.S. semiconductor industry. ***

* 9660116贝利斯 这个小型企业创新研究第一阶段项目将提供一个先进的半导体加工的新型等离子体源的可行性的初步演示。 主要需要改进的低压/高密度等离子体源，其可缩放到具有精确控制的和均匀的等离子体密度分布的大面积。 建议的旋转场等离子体源（RFPS）是一种新型的源，预计将满足苛刻的要求蚀刻和加工的特征尺寸为0.5米。 RFPS依赖于一种新型的高频旋转磁场驱动概念，以不受半导体晶片插入影响的方式产生和塑造等离子体密度。 预期其在0.1 - 10毫托的压力范围内用反应性气体操作。 第一阶段的具体目标是：（1）设计和组装第一阶段RFPS可行性实验;（2）进行实验，以证明等离子体的产生与控制的均匀性;和（3）开发实验室原型RFPS系统的概念设计，在第二阶段的商业蚀刻系统中运行。 一家主要的干法蚀刻设备供应商对RFPS概念表示了极大的兴趣，并将参与第一阶段的工作。 该项目有助于微电子和光电子领域的国家关键技术。 该项目将提供一种上级方法，用于产生控制良好的等离子体，用于广泛的半导体材料加工应用。 RFPS的优点包括：（1）可缩放到400 mm的晶片直径，具有良好的均匀性;（2）优异的可控性;以及（3）低资本和维护成本。 这将大大提高美国半导体行业的竞争力。 ***