SBIR Phase I: Hybrid Jet Vapor Rotating Disk Tool for SiC-Thin Film Devices

SBIR 第一阶段：用于 SiC 薄膜器件的混合喷射蒸气旋转盘工具

• 批准号: 0214614
• 负责人: Gary Tompa
• 金额: $ 10万
• 依托单位: STRUCTURED MATERIALS INDUSTRIES, INC.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-07-01 至 2002-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0214614&HistoricalAwards=false
• 关键词: SBIR; Phase; Hybrid; Jet; Vapor

This Small Business Innovation Research (SBIR) Phase I project will synthesize will demonstrate that a hybrid system combining the attributes of Jet Vapor Deposition and Rotating Disk Reactors solves existing Silicon Carbide film deposition problems and can be developed to create a superior film production tool. The high speed "jet" convectively transports precursors directly to the surface, overcoming diffusion-limited transport rates, and largely avoiding unwanted pre-reactions in the gas phase; the rotation allows the "jets"to uniformly "paint" the surface with precursor. Our Phase I efforts will focus on proving that the hybrid tool will be a superior tool for Silicon Carbide epitaxy--highly desired for microelectronic devices such as high-power, high-temperature,high frequency devices. Potential commercial applications of the research are expected in reliable, micro-fabrication process. The successful development of Silicon Carbide film deposition would represent an important advancement in metal thin film deposition process.

这项小型企业创新研究（SBIR）第一阶段项目将综合展示一种结合了喷射气相沉积和旋转盘反应器特性的混合系统，解决了现有的碳化硅薄膜沉积问题，并可以开发出一种卓越的薄膜生产工具。高速“射流”对流将前驱体直接输送到表面，克服了扩散限制的输送速率，并在很大程度上避免了气相中不必要的预反应；旋转允许“射流”均匀地用前驱体“涂”表面。我们第一阶段的工作将集中在证明混合工具将成为碳化硅外延的优越工具-高功率，高温，高频设备等微电子设备非常需要。该研究有望在可靠的微加工工艺中实现潜在的商业应用。碳化硅薄膜沉积技术的成功开发是金属薄膜沉积技术的重要进展。