SBIR Phase I: Hybrid Jet Vapor Rotating Disk Tool for SiC-Thin Film Devices

这个小型企业创新研究（SBIR）第一阶段项目将综合证明，一个混合系统结合了喷射气相沉积和转盘反应器的属性，解决了现有的碳化硅薄膜沉积问题，并可以开发创造一个上级薄膜生产工具。高速“射流”对流地将前体直接输送到表面，克服了扩散限制的输送速率，并在很大程度上避免了气相中不必要的预反应;旋转允许“射流“用前体均匀地“涂覆”表面。我们的第一阶段工作将集中在证明混合工具将是一个上级工具的碳化硅外延-高度期望的微电子器件，如高功率，高温，高频器件。该研究有望在可靠的微制造工艺中获得潜在的商业应用。 碳化硅薄膜沉积技术的成功开发将代表金属薄膜沉积工艺的一个重要进展。

This Small Business Innovation Research (SBIR) Phase I project will synthesize will demonstrate that a hybrid system combining the attributes of Jet Vapor Deposition and Rotating Disk Reactors solves existing Silicon Carbide film deposition problems and can be developed to create a superior film production tool. The high speed "jet" convectively transports precursors directly to the surface, overcoming diffusion-limited transport rates, and largely avoiding unwanted pre-reactions in the gas phase; the rotation allows the "jets"to uniformly "paint" the surface with precursor. Our Phase I efforts will focus on proving that the hybrid tool will be a superior tool for Silicon Carbide epitaxy--highly desired for microelectronic devices such as high-power, high-temperature,high frequency devices. Potential commercial applications of the research are expected in reliable, micro-fabrication process. The successful development of Silicon Carbide film deposition would represent an important advancement in metal thin film deposition process.