SBIR Phase I: Single Crystals for High Temperature, High Power Electronics

* 摘要 小行星9660642 这个小企业创新研究第一阶段项目将开发一种新的工艺来生产单晶碳化硅。碳化硅具有独特的电和热物理性能，使其在高温，高功率和高频电子应用中的使用非常有吸引力。以合理的成本获得所需质量的单晶碳化硅晶片将充分实现这些器件在高温、高功率微电子学的许多领域中的益处。在第一阶段，将证明这种生产单晶碳化硅的新方法的可行性。该技术将在第二阶段进行优化，目的是在第三阶段实现商业化。 成功开发出一种具有成本效益的生产优质单晶碳化硅的方法，将使高温、大功率微电子器件在汽车、航空航天、化学精炼、核电、能源生产等行业中得到应用。***

*** ABSTRACT 9660642 Pirzada This Small Business Innovation Research Phase I project will develop a novel process to produce single crystal silicon carbide. Silicon carbide possesses a unique combination of electrical and thermophysical properties that make its use in high temperature, high power and high-frequency electronics applications very attractive. The availability of a single crystal silicon carbide wafer of the required quality at a reasonable cost will fully realize the benefits of these devices in many areas of high temperature, high power microelectronics. During Phase I, the feasibility of this new approach to producing single crystal silicon carbide will be demonstrated. The technology will optimized during Phase II with the aim of commercializing the process in Phase III. Successful development of a cost-effective method for producing quality single crystal silicon carbide will enable the application of high temperature, high power microelectronic devices in the automotive, aerospace, chemical refining, nuclear power, energy production, and other industries. ***