SBIR Phase I: Chemical Vapor Deposition (CVD) of Copper Alloys from Bimetallic, Single Source Precursors

SBIR 第一阶段：采用双金属、单一来源前驱体化学气相沉积 (CVD) 铜合金

• 批准号: 9660730
• 负责人: Thomas Baum
• 金额: $ 7.5万
• 依托单位: Advanced Technology Materials, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-01-01 至 1997-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9660730&HistoricalAwards=false
• 关键词: SBIR; Phase; Chemical; Vapor; Deposition

*** 96-60730 Baum This Phase I Small Business Innovation Research project will achieve chemical vapor deposition (CVD) of copper (Cu) and copper-alloy films via thermal decomposition of bimetallic, single source precursors. A novel class of bimetallic single source Cu(1)(13-diketonato) complexes will be synthesized, characterized and optimized for CVD film growth of doped copper films (alloys). Both the Lewis base, which contains the second metal center, and 13-diketonate ligand identity will be altered to "tailor" the precursor properties for the deposition of high-purity copper alloy films. The copper complexes will be studied to correlate structure -property relationships and utility for CVD. Using this approach, conformal, doped Cu films can be explored as high-performance interconnects in integrated circuits. A CVD metallization process for the deposition of copper alloys will provide a mechanism for the formation of high performance integrated circuits. Using low resistivity interconnects, in tandem with low dielectric constant materials, provides a pathway to superior device performance. Further, copper alloys can dramatically improve both the electromigration and thermal stability of the submicron sized interconnects. In Phase II, collaboration with a major IC manufacturer and CVD tool vendor will be used to evaluate the commercial potential of the interconnect process. This Phase I research will facilitate fabrication of high performance logic and memory devices. World-wide commercialization in Phase III is expected to impact a sizeable market.

* 96-60730鲍姆 该第一阶段小企业创新研究项目将通过热分解铜（Cu）和铜合金薄膜的化学气相沉积（CVD），单一来源的前体。合成了一类新型的单源Cu（1）（13-二酮基）配合物，并对其进行了表征和优化，用于掺杂铜薄膜（合金）的CVD薄膜生长。包含第二金属中心的刘易斯碱和13-二酮配体身份将被改变以“定制”用于沉积高纯度铜合金膜的前体性质。铜配合物将被研究以关联结构-性质关系和用于CVD的效用。使用这种方法，共形的，掺杂的铜膜可以探索作为高性能的集成电路中的互连。用于沉积铜合金的CVD金属化工艺将提供用于形成高性能集成电路的机制。与低介电常数材料串联使用低电阻率互连提供了获得上级器件性能的途径。此外，铜合金可以显著地改善亚微米尺寸互连的电迁移和热稳定性。在第二阶段，将与一家主要的IC制造商和CVD工具供应商合作，评估互连工艺的商业潜力。 第一阶段的研究将促进高性能逻辑和存储器件的制造。 第三阶段的全球商业化预计将影响相当大的市场。