SBIR Phase I: Chemical Vapor Deposition (CVD) of Copper Alloys from Bimetallic, Single Source Precursors

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*** 96-60730 Baum This Phase I Small Business Innovation Research project will achieve chemical vapor deposition (CVD) of copper (Cu) and copper-alloy films via thermal decomposition of bimetallic, single source precursors. A novel class of bimetallic single source Cu(1)(13-diketonato) complexes will be synthesized, characterized and optimized for CVD film growth of doped copper films (alloys). Both the Lewis base, which contains the second metal center, and 13-diketonate ligand identity will be altered to "tailor" the precursor properties for the deposition of high-purity copper alloy films. The copper complexes will be studied to correlate structure -property relationships and utility for CVD. Using this approach, conformal, doped Cu films can be explored as high-performance interconnects in integrated circuits. A CVD metallization process for the deposition of copper alloys will provide a mechanism for the formation of high performance integrated circuits. Using low resistivity interconnects, in tandem with low dielectric constant materials, provides a pathway to superior device performance. Further, copper alloys can dramatically improve both the electromigration and thermal stability of the submicron sized interconnects. In Phase II, collaboration with a major IC manufacturer and CVD tool vendor will be used to evaluate the commercial potential of the interconnect process. This Phase I research will facilitate fabrication of high performance logic and memory devices. World-wide commercialization in Phase III is expected to impact a sizeable market.