SBIR Phase I: Chemical Vapor Deposition (CVD) of Copper Alloys from Bimetallic, Single Source Precursors

*96-60730 Baum这个第一阶段小型企业创新研究项目将通过双金属、单源前体的热分解，实现铜(铜)和铜合金薄膜的化学气相沉积(CVD)。合成、表征和优化了一类新型的双金属单源铜(1)(13-二酮)配合物，用于CVD生长掺杂铜膜(合金)。包含第二金属中心的Lewis碱和13-二酮配体的特性都将被改变，以便为沉积高纯铜合金薄膜“量身定做”前体属性。将对铜配合物进行研究，以关联结构-性质关系和对CVD的用途。利用这种方法，共形掺杂铜膜可以被开发为集成电路中的高性能互连。用于沉积铜合金的CVD金属化工艺将为形成高性能集成电路提供机制。使用低电阻率互连，与低介电常数材料相结合，提供了一条实现卓越器件性能的途径。此外，铜合金可以显著提高亚微米级互连线的电迁移和热稳定性。在第二阶段，将利用与一家主要集成电路制造商和CVD工具供应商的合作来评估互连工艺的商业潜力。这项第一阶段的研究将促进高性能逻辑和存储器件的制造。第三阶段的全球商业化预计将影响一个相当大的市场。

*** 96-60730 Baum This Phase I Small Business Innovation Research project will achieve chemical vapor deposition (CVD) of copper (Cu) and copper-alloy films via thermal decomposition of bimetallic, single source precursors. A novel class of bimetallic single source Cu(1)(13-diketonato) complexes will be synthesized, characterized and optimized for CVD film growth of doped copper films (alloys). Both the Lewis base, which contains the second metal center, and 13-diketonate ligand identity will be altered to "tailor" the precursor properties for the deposition of high-purity copper alloy films. The copper complexes will be studied to correlate structure -property relationships and utility for CVD. Using this approach, conformal, doped Cu films can be explored as high-performance interconnects in integrated circuits. A CVD metallization process for the deposition of copper alloys will provide a mechanism for the formation of high performance integrated circuits. Using low resistivity interconnects, in tandem with low dielectric constant materials, provides a pathway to superior device performance. Further, copper alloys can dramatically improve both the electromigration and thermal stability of the submicron sized interconnects. In Phase II, collaboration with a major IC manufacturer and CVD tool vendor will be used to evaluate the commercial potential of the interconnect process. This Phase I research will facilitate fabrication of high performance logic and memory devices. World-wide commercialization in Phase III is expected to impact a sizeable market.