Engineering Research Equipment: Precision Semiconductor Parameter Analysis System

9700111 Neugroschel佛罗里达大学电气与计算机工程系固态电子实验室拟购买半导体参数分析站，支持深亚微米晶体管的基础研究，推动美国集成电路制造商的未来技术。该设备将用于多个项目，如NSF资助（ECS-9220382）支持的关于超薄Ge(x)Si（1-x）层性能的研究，用于最先进的GeSi异质结双极晶体管（HBTS），用于超过2GHz频段的模拟数字电信应用。正在就这一主题向国家科学基金会提出一项后续建议，以满足与工业伙伴共同提出的国家科学基金会目标倡议。另一个将使用该设备的当前研究项目是半导体研究公司（Semiconductor research Corporation）的合同，该合同旨在调查深亚微米硅金属氧化物半导体和双极结晶体管（MOSTs和BJTS）的基本可靠性限制。其他正在进行和计划中的研究包括用于低功耗应用的深亚微米薄膜绝缘体上硅（TFSOI） MOST和BJT技术，将Si MOST扩展到0.1微米和IV的基本限制，以及支持高压和智能电源集成电路发展的基本可靠性限制。这些项目都是与德州仪器、摩托罗拉、英特尔和其他几家美国制造商密切合作进行的。拟议的仪器站是不可用的，是独一无二的。有了这个设备，我们期望大大提高对未来更小尺寸晶体管的基本限制的理解。此外，我们期望从提议的设备中获得的结果对未来制造技术的进步做出重大贡献。＊＊＊

9700111 Neugroschel The Solid-State Electronics laboratory at the Department of Electrical and Computer Engineering of the University of Florida proposes to purchase semiconductor parameter analysis stations to support fundamental research in deep-submicron transistors for advancement of future technology of American integrated circuit manufacturers. The equipment will be used for several projects, such as the NSF grant (ECS-9220382) supported investigation on the properties of thin Ge(x)Si(1-x) layers for state-of-the-art GeSi heterojunction bipolar transistors (HBTS) for analog-digital telecommunication applications beyond the 2GHz bands. A follow-on proposal to NSF on this subject is being prepared to meet the NSF-GOALI initiative with industrial partners. Another current research project that will use the equipment is a Semiconductor Research Corporation contract on investigating the fundamental reliability limits of deep submicron silicon metal-oxidesemiconductor and bipolar junction transistors (MOSTs and BJTS). Other ongoing and planned investigations include deep submicron thin-film silicon-on-insulator (TFSOI) MOST and BJT technology for low power applications, fundamental limits on extending Si MOSTs to 0.1-micron and IV, and fundamental reliability limits in support of the development of high-voltage and smart power integrated circuits. These projects are all undertaken in close collaboration with Texas Instruments, Motorola, Intel, and several other American manufacturers. The proposed instrument stations are not available and are unique. With this equipment, we expect to significantly improve the understanding of the fundamental limits imposed on future transistors at smaller dimensions. In addition, we expect the results obtained from the proposed equipment to contribute significantly to the advances of future manufacturing technology. ***