Engineering Research Equipment: Precision Semiconductor Parameter Analysis System

9700111 Neugroschel佛罗里达大学电气和计算机工程系的固态电子实验室提议购买半导体参数分析站，以支持深亚微米晶体管的基础研究，促进美国集成电路制造商的未来技术。 该设备将用于几个项目，如NSF赠款（ECS-9220382）支持的研究薄Ge（x）Si（1-x）层的性能，用于超过2GHz频段的模拟-数字电信应用的最先进的GeSi异质结双极晶体管（HBTS）。 目前正在编写就这一问题向国家科学基金会提出的后续提案，以便与工业伙伴一道落实国家科学基金会全球海洋环境倡议。 目前另一个将使用该设备的研究项目是半导体研究公司的一项合同，内容是调查深亚微米硅金属氧化物半导体和双极结型晶体管（MOST和BJT）的基本可靠性极限。 其他正在进行和计划中的研究包括用于低功率应用的深亚微米薄膜绝缘体上硅（TFSOI）MOST和BJT技术，将Si MOST扩展到0.1微米和IV的基本限制，以及支持高压和智能功率集成电路发展的基本可靠性限制。 这些项目都是与德州仪器、摩托罗拉、英特尔和其他几家美国制造商密切合作进行的。 拟议的仪器站尚不具备，而且是独一无二的。 有了这个设备，我们希望能大大提高对未来更小尺寸晶体管的基本限制的理解。 此外，我们预计从拟议设备获得的结果将大大有助于未来制造技术的进步。 ***

9700111 Neugroschel The Solid-State Electronics laboratory at the Department of Electrical and Computer Engineering of the University of Florida proposes to purchase semiconductor parameter analysis stations to support fundamental research in deep-submicron transistors for advancement of future technology of American integrated circuit manufacturers. The equipment will be used for several projects, such as the NSF grant (ECS-9220382) supported investigation on the properties of thin Ge(x)Si(1-x) layers for state-of-the-art GeSi heterojunction bipolar transistors (HBTS) for analog-digital telecommunication applications beyond the 2GHz bands. A follow-on proposal to NSF on this subject is being prepared to meet the NSF-GOALI initiative with industrial partners. Another current research project that will use the equipment is a Semiconductor Research Corporation contract on investigating the fundamental reliability limits of deep submicron silicon metal-oxidesemiconductor and bipolar junction transistors (MOSTs and BJTS). Other ongoing and planned investigations include deep submicron thin-film silicon-on-insulator (TFSOI) MOST and BJT technology for low power applications, fundamental limits on extending Si MOSTs to 0.1-micron and IV, and fundamental reliability limits in support of the development of high-voltage and smart power integrated circuits. These projects are all undertaken in close collaboration with Texas Instruments, Motorola, Intel, and several other American manufacturers. The proposed instrument stations are not available and are unique. With this equipment, we expect to significantly improve the understanding of the fundamental limits imposed on future transistors at smaller dimensions. In addition, we expect the results obtained from the proposed equipment to contribute significantly to the advances of future manufacturing technology. ***