Engineering Research Equipment: Precision Semiconductor Parameter Analysis System

工程研究设备： 精密半导体参数分析系统

• 批准号: 9700111
• 负责人: Arnost Neugroschel
• 金额: $ 6.2万
• 依托单位: University of Florida
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-06-15 至 1999-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9700111&HistoricalAwards=false
• 关键词: Engineering; Research; Equipment; Precision; Semiconductor

9700111 Neugroschel The Solid-State Electronics laboratory at the Department of Electrical and Computer Engineering of the University of Florida proposes to purchase semiconductor parameter analysis stations to support fundamental research in deep-submicron transistors for advancement of future technology of American integrated circuit manufacturers. The equipment will be used for several projects, such as the NSF grant (ECS-9220382) supported investigation on the properties of thin Ge(x)Si(1-x) layers for state-of-the-art GeSi heterojunction bipolar transistors (HBTS) for analog-digital telecommunication applications beyond the 2GHz bands. A follow-on proposal to NSF on this subject is being prepared to meet the NSF-GOALI initiative with industrial partners. Another current research project that will use the equipment is a Semiconductor Research Corporation contract on investigating the fundamental reliability limits of deep submicron silicon metal-oxidesemiconductor and bipolar junction transistors (MOSTs and BJTS). Other ongoing and planned investigations include deep submicron thin-film silicon-on-insulator (TFSOI) MOST and BJT technology for low power applications, fundamental limits on extending Si MOSTs to 0.1-micron and IV, and fundamental reliability limits in support of the development of high-voltage and smart power integrated circuits. These projects are all undertaken in close collaboration with Texas Instruments, Motorola, Intel, and several other American manufacturers. The proposed instrument stations are not available and are unique. With this equipment, we expect to significantly improve the understanding of the fundamental limits imposed on future transistors at smaller dimensions. In addition, we expect the results obtained from the proposed equipment to contribute significantly to the advances of future manufacturing technology. ***

9700111美国佛罗里达大学电气与计算机工程系固态电子实验室Neugroschel提议购买半导体参数分析站，以支持深亚微米晶体管的基础研究，以促进美国集成电路制造商未来的技术进步。该设备将用于几个项目，例如美国国家科学基金会拨款(ECS-9220382)资助的用于2 GHz以上模拟数字通信应用的最先进的GeSi异质结双极晶体管(HBT)的Ge(X)Si(1-x)薄层特性的研究。正在准备就这一问题向国家科学基金会提出后续建议，以满足国家科学基金会与工业合作伙伴的目标倡议。目前将使用该设备的另一个研究项目是半导体研究公司的一个合同，该合同调查深亚微米硅金属氧化物半导体和双极结晶体管(MOST和BJTS)的基本可靠性极限。其他正在进行和计划中的研究包括用于低功耗应用的深亚微米薄膜绝缘体上硅(TFSOI)MOST和BJT技术，将硅最大功率扩展到0.1微米和IV的基本限制，以及支持高压和智能功率集成电路发展的基本可靠性限制。这些项目都是与德州仪器、摩托罗拉、英特尔和其他几家美国制造商密切合作进行的。拟议的仪表站不可用，而且是独一无二的。有了这台设备，我们预计将显著提高对未来较小尺寸晶体管的基本限制的理解。此外，我们预计从拟议设备中获得的结果将对未来制造技术的进步做出重大贡献。***