GOALI: Atomic Correlations in Disordered Materials Observed using Variable Coherence Transmission Electron Microscopy
GOALI:使用可变相干透射电子显微镜观察无序材料中的原子相关性
基本信息
- 批准号:9703906
- 负责人:
- 金额:$ 22.1万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:1997
- 资助国家:美国
- 起止时间:1997-08-01 至 2002-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
w:\awards\awards96\num.doc 9703906 Gibson This GOALI research project, which is supported in part by the Office of Multidisciplinary Activities (OMA) of the MPS Directorate, intends to develop a quantitative technique using the TEM to characterize network structure in amorphous and disordered materials. Although TEM has been highly successful in the study of defects in crystalline materials, it has been less useful thus far in characterizing amorphous materials. The present project is based on the premise that the high resolution TEM image, nonetheless, contains a wealth of information about the microstructure in disordered materials. An important aspect of the proposed new technique, which will be pursued experimentally and theoretically, is the use of the three-body correlation function to give new insight into medium range order. Theoretical methods for extracting higher-order correlation functions directly from experiment will be explored. Materials to be studied include amorphous semiconductors, gate dielectrics, and ferroelectrics. This work will be carried out collaboratively by two PI's , one from a university, one from an industrial lab, and by a jointly supervised graduate student who will benefit from a significant exposure to industrial research. %%% This GOALI research project, which is supported in part by the Office of Multidisciplinary Activities (OMA) of the MPS Directorate, will be carried out by a team of materials scientists, both experts in use of the Transmission Electron Microscope (TEM), one at a research university, and the other at a leading industrial research laboratory. An excellent graduate student will benefit from joint supervision by the two PI's, and in the process of doing a significant portion of his/her thesis research at the industrial laboratory, will gain valuable experience and contacts in industry. The project is designed to extend the usefulness of the TEM in assessing the degree of disorder present in real materials, including gate oxides which are central in semiconductor transistor devices. Knowledge of the degree of disorder in a given material can be useful in predicting its performance in a given application. The outcomes of the project are expected to include new knowledge concerning the use of the TEM, and an excellent training experience with significant industrial exposure, for a graduate student. ***
吉布森 该GOALI研究项目得到了办事处的部分支持, 多学科活动(OMA) 的 MPS董事会,打算开发一种定量技术,使用TEM来表征无定形和无序材料中的网络结构。尽管TEM在研究晶体材料中的缺陷方面非常成功,但迄今为止,它在表征非晶材料方面的用处不大。 本项目的前提是,高分辨率TEM图像,尽管如此,包含了大量的信息,在无序材料的微观结构。的一个重要方面 的 提出 新技术,将 被 在实验和理论上的追求,是使用三体相关函数给新的洞察中程秩序。 理论 将探索直接从实验中提取高阶相关函数的方法。待研究的材料包括非晶半导体、闸极晶体管和铁电体。这项工作将由两名PI合作开展,一名来自大学,一名来自工业实验室,以及一名联合监督的研究生,他们将从工业研究的大量接触中受益。 % GOALI研究项目得到了办公室的部分支持 多学科活动(OMA) 的 MPS董事会,将由一个团队进行, 材料科学家,都是透射电子显微镜(TEM)的使用专家,一个在研究型大学,另一个在领先的工业研究实验室。一个优秀的研究生将受益于两个PI的联合监督,并在做他/她的论文研究的重要部分的过程中 在工业实验室,将获得宝贵的经验, 和工业界的联系。该项目旨在扩大TEM在评估真实的材料中存在的无序程度方面的实用性,包括半导体晶体管器件中的核心栅极氧化物。给定材料中的无序程度的知识可用于预测其在给定应用中的性能。该项目的成果预计将包括有关TEM使用的新知识,并与显着的工业接触的优秀培训经验,为研究生。 ***
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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J. Murray Gibson其他文献
The Importance of Averaging to Interpret Electron Correlographs of Disordered Materials
平均对于解释无序材料电子相关图的重要性
- DOI:
10.1017/s1431927613014116 - 发表时间:
2014 - 期刊:
- 影响因子:2.8
- 作者:
T. Sun;M. Treacy;Tian T Li;N. Zaluzec;J. Murray Gibson - 通讯作者:
J. Murray Gibson
Visualization of Dynamic Near-Surface Processes
- DOI:
10.1557/s0883769400036745 - 发表时间:
2013-11-29 - 期刊:
- 影响因子:4.900
- 作者:
Ray D. Twesten;J. Murray Gibson;Frances M. Ross - 通讯作者:
Frances M. Ross
J. Murray Gibson的其他文献
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{{ truncateString('J. Murray Gibson', 18)}}的其他基金
Acquisition of a Field-Emission Energy-Filtering Transmission Electron Microscope for Materials Research
购买用于材料研究的场发射能量过滤透射电子显微镜
- 批准号:
9871119 - 财政年份:1998
- 资助金额:
$ 22.1万 - 项目类别:
Standard Grant
Naturally Nanostructured Epitaxial Semiconductors
天然纳米结构外延半导体
- 批准号:
9705440 - 财政年份:1997
- 资助金额:
$ 22.1万 - 项目类别:
Continuing Grant
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