Naturally Nanostructured Epitaxial Semiconductors

天然纳米结构外延半导体

• 批准号: 9705440
• 负责人: J. Murray Gibson
• 金额: $ 108.92万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-07-15 至 2001-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9705440&HistoricalAwards=false
• 关键词: Naturally; Nanostructured; Epitaxial; Semiconductors

9705440 Gibson This FRG/GOALI proposal addresses basic materials science and engineering issues in a collaborative program between the University of Illinois and Hewlett-Packard Laboratories to understand fundamental phenomena and interactions associated with naturally nanostructured epitaxial semiconductors. Goals of the project are to obtain semiconductor epitaxial nanostructures smaller than feasible via lithography, and to examine their applications to novel devices; strain-induced self organization and kinetically driven pattern formation are two approaches being taken to achieve naturally nanostructured materials. The joint activities include staff exchange with graduate students spending time at H-P, and with additional staff exchange between U. IL and H-P personnel. The proposed research emphasizes understanding of fundamental mechanisms and processes along with exploration of advanced device technology. %%% The project addresses forefront materials science research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices and integrated circuitry, in general. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials and structures for the quantum mechanical devices of the future. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area, and with the benefit of teaming with industrial research staff, and exposure to industrial facilities, equipment and approaches. ***

这项FRG/GOALI提案在伊利诺伊大学和惠普实验室之间的合作项目中解决了基础材料科学和工程问题，以了解与天然纳米结构外延半导体相关的基本现象和相互作用。该项目的目标是通过光刻技术获得比可行的更小的半导体外延纳米结构，并研究其在新型器件中的应用；应变诱导的自组织和动力学驱动的模式形成是实现自然纳米结构材料的两种方法。这些联合活动包括与在惠普工作的研究生进行人员交流，以及在美国和惠普员工之间进行额外的人员交流。建议的研究强调对基本机制和过程的理解以及对先进设备技术的探索。该项目涉及材料科学领域的前沿材料科学研究问题，具有很高的技术相关性。总的来说，这项研究将为电子/光子器件和集成电路的重要方面提供基础材料科学知识。此外，从研究中获得的基本知识和理解预计将有助于提高先进器件和电路的性能，为未来量子力学器件的设计和生产改进的材料和结构提供基本的理解和基础。该计划的一个重要特点是通过在基础和技术重要领域培训学生，并与工业研究人员合作，并接触工业设施，设备和方法，将研究和教育结合起来。＊＊＊