Broadly Tunable Femtosecond Sources and Ultrafast Processes

提案编号：ECS-9705704 主要研究者：C. L.唐 标题：宽调谐飞秒光参量源 在这项研究中，PI根据先前的资助开发的飞秒光学参量源的独特功能将用于研究半导体和量子阱结构中的载流子动力学。载流子动力学研究将侧重于载流子捕获和逃逸，以及III-V族化合物半导体（AlxGayAsz和GaAs）中的电子和空穴动力学。 化合物半导体和量子威尔斯阱在微电子学和激光应用中极为重要。由于需要超快和红外光谱区探测器来研究所涉及的快载流子动力学，因此直接研究载流子动力学是不可能的。 PI开发所需的资源将使第一次直接研究成为可能。 一些进一步的源开发研究，扩大范围的光学参量振荡器（OPO）源从330纳米到18微米，也计划根据这项赠款。 这项研究将创建一个广泛的可调谐光源，其范围从近紫外到中红外，这将是许多应用的有力工具。

Proposal Number: ECS-9705704 Principal Investigator: C. L. Tang Title: Broadly tunable femtosecond optical parametric sources In this research, the unique capabilities of the femtosecond optical parametric sources developed by the PI under a previous grant will be used to study carrier dynamics in semiconductors and quantum well structures. The carrier dynamics studies will focus on carrier capture and escape, and electron and hole dynamics in III-V compound semiconductors (AlxGayAsz and GaAs). Compound semiconductors and quantum wells are extremely important for microelectronics and laser applications. Direct study of the carrier dynamics has been impossible to date due to the need for both ultrafast and infrared spectral region probes to study the fast carrier dynamics involved. The PI's development of the needed sources will enable a first time direct study. Some further source development research, to extend the range of the optical parametric oscillator (OPO) source from 330 nanometers to 18 microns, is also planned under this grant. This research will create a broadly tunable source with a range extending from the near-ultraviolet to the mid-infrared, which will be a powerful tool for many applications.