Investigation of Polycrystalline Silicon-Germanium Films for Micro-Electromechanical

微机电用多晶硅锗薄膜的研究

• 批准号: 9712750
• 负责人: Tsu-Jae King-Liu
• 金额: $ 30万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-10-01 至 2000-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9712750&HistoricalAwards=false
• 关键词: Investigation; Polycrystalline; Silicon; Germanium; Films

ABSTRACT EEC-9712750 Polycrystalline silicon (poly-Si) is presently employed as a structural material in surface micro-machined sensors and actuators. The design and fabrication of micromechanical structures can often be constrained by the deposition conditions and properties of poly-Si, therefore, the development of an alternative structural material which relieves these constraints would have a significant impact on MEMS technology. Polycrystalline silicon-germanium (poly-SiGe) can be conformally deposited and doped at much lower temperatures (less than 500 lm1 (C) than poly-Si, and is readily etched by conventional wet or dry processes. Low tensile stress can be achieved in as-deposited poly-SiGe films without high-temperature annealing. These properties make poly-SiGe a promising structural material for surface-micromachined structures, particularly in integrated microsystems. Because SiGe has only been investigated as an electronic material, its mechanical properties are note yet well known. A comprehensive study of the mechanical properties of low-pressure chemical vapor deposited (LPCVD) poly-SiGe films, will be conducted to assess their potential for MEMS application. The effects of deposition, doping and annealing conditions on film microstructure and mechanical properties will be determined for films of various Ge contents. Established methodologies for evaluating poly-Si films will be employed to characterize stress and stress-gradients in poly-SiGe films. The electrical conductivity and etching behavior of these films will also be studied. The development of an integrated SiGe MEMS technology is a goal of this work.

摘要EEC-9712750多晶硅（Poly-SI）目前被用作表面微型传感器和执行器中的结构材料。 小机械结构的设计和制造通常可以受到多-SI的沉积条件和特性的限制，因此，替代结构材料的开发可以减轻这些约束，从而对MEMS技术产生重大影响。 多晶硅球体（多晶状体）可以在得多的温度（小于500 lm1（c）的少于500 lm1（c）的温度下），并且很容易通过常规的湿或干过程蚀刻，可以在常规的湿润或干过程中蚀刻。低张式应激可以在层压式的构造中，而无需在构造的构图中，使这些物质构成这些物体，使这些属性构成质量。在综合的微型系统中，由于仅作为电子材料进行了研究，其机械性能是对低压化学蒸气（LPCVD）沉积的机械性能的全面研究。 GE含量。