Japan JSPS Program: Novel Single Electron Coulomb Blockade Transistor as a Probe in the Study of Si02/Si Interface

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Hinds 9724743 This award supports a 24 month Japan Society for the Promotion of Science (JSPS) Postdoctoral Fellowship for Dr. Bruce Hinds at the Tokyo Institute of Technology, Tokyo, Japan. Dr. Hinds will work with Dr. Shunri Oda, Professor at the Research Center of Quantum Effect Electronics, on a research project entitled, "Novel Single Electron Coulomb Blockade Transistor as Probe in the Study of the SiO2/Si Interface." The proposed research will focus on the design of a single electron Coulomb blockade transistor and will be specifically directed toward lower gate control voltages (required for logic applications) and systematic control of interfacial oxides. Current research on Coulomb blockade transistors suggests that the charge of a single electron (in a floating gate) controls the state of the transistor (the flow of electrons through the channel). The proposed research will examine a novel transistor design that will allow for variations in interfacial oxides (SiO2/Si) present at the floating gate, modify the flow of electrons through the channel, and lower the control voltages that determine the efficacy of logic operations. Anticipated results of the research is the effective utilization of lithography with feature sizes near 10 nanometers, representing a significant advance in the scaling down of electronic device structures. The results of the proposed research will be critical to the advancement of nano-scale electronics and the conventional metal oxide semiconductor (MOS) fabrication, which is the basis of the present microelectronics industry. ***