Japan JSPS Program: Novel Single Electron Coulomb Blockade Transistor as a Probe in the Study of Si02/Si Interface

HINDS 9724743该奖项支持日本科学促进会(JSPS)在日本东京工业大学为Bruce Hinds博士提供的为期24个月的博士后奖学金。Hinds博士将与量子效应电子学研究中心教授Shunri Oda博士合作开展一项研究项目，题为“作为SiO_2/Si界面研究中的探针的新型单电子库仑阻挡晶体管”。拟议的研究将集中于单电子库仑阻塞晶体管的设计，并将专门针对较低的栅极控制电压(逻辑应用所需)和界面氧化物的系统控制。目前对库仑阻塞晶体管的研究表明，单个电子(在浮动栅极中)的电荷控制着晶体管的状态(电子在通道中的流动)。这项拟议的研究将检验一种新的晶体管设计，该设计将允许浮栅中存在的界面氧化物(SiO_2/Si)的变化，改变通过沟道的电子流动，并降低决定逻辑运算效率的控制电压。这项研究的预期结果是有效地利用了特征尺寸接近10纳米的光刻技术，这代表着电子设备结构缩小方面的重大进步。这项研究的结果将对纳米电子学和传统的金属氧化物半导体(MOS)制造的发展至关重要，传统的金属氧化物半导体(MOS)是目前微电子产业的基础。***

Hinds 9724743 This award supports a 24 month Japan Society for the Promotion of Science (JSPS) Postdoctoral Fellowship for Dr. Bruce Hinds at the Tokyo Institute of Technology, Tokyo, Japan. Dr. Hinds will work with Dr. Shunri Oda, Professor at the Research Center of Quantum Effect Electronics, on a research project entitled, "Novel Single Electron Coulomb Blockade Transistor as Probe in the Study of the SiO2/Si Interface." The proposed research will focus on the design of a single electron Coulomb blockade transistor and will be specifically directed toward lower gate control voltages (required for logic applications) and systematic control of interfacial oxides. Current research on Coulomb blockade transistors suggests that the charge of a single electron (in a floating gate) controls the state of the transistor (the flow of electrons through the channel). The proposed research will examine a novel transistor design that will allow for variations in interfacial oxides (SiO2/Si) present at the floating gate, modify the flow of electrons through the channel, and lower the control voltages that determine the efficacy of logic operations. Anticipated results of the research is the effective utilization of lithography with feature sizes near 10 nanometers, representing a significant advance in the scaling down of electronic device structures. The results of the proposed research will be critical to the advancement of nano-scale electronics and the conventional metal oxide semiconductor (MOS) fabrication, which is the basis of the present microelectronics industry. ***