LT: Nonflowing Chemical Processing for Thin Film Manufacturing
LT: Nonflowing Chemical Processing for Thin Film Manufacturing
批准号:
9727334
负责人:
Carol McConica
金额:
$5.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1997
资助国家:
美国
项目状态:
已结题
起止时间:
1997-10-01 至 1999-09-30
中文摘要
9727334 McConica这项研究致力于开发一种方法,以消除应用于集成电路制造的薄膜化学加工过程中不必要的化学品流动。其目标是使薄膜制造设施能够通过利用相对于所有工艺流体100%高效的化学反应器来实现工业生态原则。实现这一目标的策略是证明可以优化非流动工艺,以最大限度地减少高纯度流体的消耗/产生,同时仍能满足薄膜性能目标。在这一限度内,在沉积的情况下,100%的液体将被转化为固体薄膜,或者在薄膜蚀刻的情况下,100%的液体将被转化为流体产品。其目的不是改变一种薄膜或一种化学物质,而是基于当前拥抱工业生态的需要,创造制造技术的范式转变。实现这一愿景的方法是设计一种新型的反应堆,可以用于许多不同的化学过程。该项目的目标是开发一份可被非流动工艺取代的IC制造中使用的流动化学工艺的清单;展示一种非流动化学工艺,该工艺和相关设施可将有毒化学品的使用和废物的产生减少1000倍,与商业生长的薄膜相当;并展示通过非流动化学气相沉积在全晶片上沉积钨的制造规范中的薄膜特性。集成电路制造中使用的化学驱动工艺的环境影响将被创造出来。然后,将根据基本的动力学和热力学原理对这些工艺进行评估,按照影响的顺序适应非流动工艺条件。将商业薄膜工艺转换为非流动条件的影响的比较将由L得出。对薄膜处理的系统方法将导致作为处理参数的函数来量化废物产生的算法。该算法将包含有关薄膜工艺及其相关设施需求的信息,例如泵油污染率和反应堆清洗产生的废物。在非流动加工过程中,将薄膜特性与近表面气体成分相关联的实验将创建一个工艺条件窗口,满足所选测试化学物质的薄膜制造规范。这些工艺条件将在上述算法中使用,以找到优化废物最小化和薄膜性能的反应器规格和工艺条件。这一过程将在晶片规模的化学气相沉积非流动反应器的建造完成后在全晶片上进行演示。
英文摘要
9727334 McConica The research addresses the development of an approach to eliminate the unnecessary flow of chemicals during the chemical processing of thin films as applied to the manufacturing of integrated circuits. The goal is to enable thin film manufacturing facilities to implement principles of industrial ecology by utilizing chemical reactors that are 100% efficient with respect to all process fluids. The strategy for achieving this goal is to demonstrate that nonflowing processes can be optimized to minimize the consumption/creation of high purity fluids while still meeting film property goals. In the limit, 1 00% of the fluid used in the process will be converted to solid film in the case of deposition, or to fluid products in the case of film etching. The intent is not to change one film or one chemistry, but to create a paradigm shift in manufacturing technology based upon a current need to embrace industrial ecology. The way to realize the vision is to design a new type of reactor that can be used in many different chemical processes. The objectives of the project are to develop a list of flowing chemical processes used in IC manufacturing that could be replaced by nonflowing processes; to demonstrate a nonflowing chemical process that reduces the use of toxic chemicals and the creation of waste, both by the process and associated facilities, by a factor of 1000 for films comparable to those grown commercially; and to demonstrate film properties within manufacturing specifications for tungsten deposition on full wafers by nonflowing chemical vapor deposition. An environmental impact paredo of chemically-driven processes used in integrated circuit manufacturing will be created. Those processes will then be evaluated in order of impact in terms of fundamental kinetic and thermodynamic principles for amenability to nonflowing process conditions. A paredo of impact of converting commercial thin film processes to nonflowing conditions wil l result. A system approach to thin film processing will result in an algorithm for quantification of waste creation as a function of processing parameters. The algorithm will contain information with respect to the thin film process and its associated facility demands, such as pump oil contamination rate and waste from reactor cleaning. Experiments relating thin film properties to near-surface gas composition during nonflowing processing will create a window of process conditions that meet film manufacturing specifications for a chosen test chemistry. These process conditions will be used in the above algorithm to find reactor specifications and processing conditions that optimize waste minimization and film properties. This process will be demonstrated on full wafers upon the completion of the construction of a wafer scale chemical vapor deposition nonflowing reactor.
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FAW: In Situ Elucidation of Reaction Pathways During Low Pressure Chemical Vapor Deposition
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批准号:9023931
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项目类别:Continuing Grant
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资助金额:$25.0万
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财政年份:1991
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负责人:Carol McConica
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依托单位:
Reaction Steps and Mechanism for Chemical Vapor Deposition of Tungsten
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批准号:8712016
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项目类别:Continuing Grant
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资助金额:$31.27万
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财政年份:1987
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负责人:Carol McConica
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依托单位:
Research Initiation: the Kinetics of the Selective Deposition of Tungsten
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批准号:8307242
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项目类别:Standard Grant
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资助金额:$4.79万
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财政年份:1983
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负责人:Carol McConica
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依托单位: