FAW: In Situ Elucidation of Reaction Pathways During Low Pressure Chemical Vapor Deposition

FAW：低压化学气相沉积过程中反应路径的原位阐明

• 批准号: 9023931
• 负责人: Carol McConica
• 金额: $ 25万
• 依托单位: Colorado State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-11-01 至 1997-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9023931&HistoricalAwards=false
• 关键词: FAW; Situ; Elucidation; Reaction; Pathways

The computation speed of modern computers is limited by the resistance of the submicron metal lines used to interconnect devices. One solution to the problem of inefficient interconnect is a vertical interconnect between layered devices, a key to 3-D integration. Because IC fabrication is traditionally 2-D procedure, no method has been developed to create vertical submicron diameter "wires". This electron elevator could be made by a selective metal deposition process whereby a material catalyzed its own deposition, filling a well in an insulating material. Loss of selectivity (LOS), leading to shorts between metal lines, is due to reaction with the noncatalytic insulator, gas phase reactions, nucleation and deposition on the insulator, and chemistries between reactive intermediates from the deposition reaction. Finding the process margin is a matter of understanding all of the chemical pathways and relevant transport processes of both the heterogeneous and homogeneous reactions. The LOS kinetics are quite complex for the reactive species, have very short lifetimes, and can only be seen with in situ diagnostics. The goal of the research is to answer some very specific questions which cannot be answered in commercial or UHV reactors. What is the role of thermodiffusion and recirculation in LPCVD reactors? What are the gas phase intermediates, reactions, and products during selective CVD? How do our LPCVD (1 torr) results compare with those we determine in the UHV studies funded by NSF? Over the long term, the research will lead to understanding what other reactants could be used to create selectively deposited vertical wires and what the process margins are in terms of local composition and temperature. Once the local conditions are known for selective deposition, it becomes necessary to implement mathematical models of commercial reactors so that the inlet gas composition which results in the desired near wafer composition can be determined. This global model must also include modeling of the transience within the submicron well as it fills. Current models will be extended to new chemistries.

现代计算机的计算速度受到用于互连设备的亚微米金属线的电阻的限制。低效率互连问题的一个解决方案是分层设备之间的垂直互连，这是3-D集成的关键。由于集成电路制造传统上是2-D过程，还没有开发出制造垂直亚微米直径“线”的方法。这种电子升降器可以通过选择性的金属沉积过程来制造，在该过程中，一种材料催化自己的沉积，在绝缘材料中填充一个势垒。选择性损失(LOS)是由于与非催化绝缘体的反应、气相反应、绝缘体上的成核和沉积以及沉积反应中活性中间体之间的化学反应造成的，导致金属线之间的短路。确定工艺裕度是了解多相反应和均相反应的所有化学路径和相关的传输过程的问题。对于活性物种来说，LOS动力学相当复杂，寿命非常短，只有通过现场诊断才能看到。这项研究的目标是回答一些在商业或特高压反应堆中无法回答的非常具体的问题。热扩散和再循环在LPCVD反应堆中的作用是什么？选择性CVD过程中的气相中间体、反应和产物是什么？我们的LPCVD(1Torr)结果与我们在NSF资助的UHV研究中确定的结果相比如何？从长远来看，这项研究将导致理解哪些其他反应物可以用来制造选择性沉积的垂直线，以及根据局部成分和温度，工艺裕度是多少。一旦知道了选择性沉积的局部条件，就有必要建立商业反应堆的数学模型，以便能够确定导致所需近晶片成分的进气成分。该全局模型还必须包括亚微米井内填充时的瞬变建模。目前的模型将扩展到新的化学物质。