FAW: In Situ Elucidation of Reaction Pathways During Low Pressure Chemical Vapor Deposition

现代计算机的计算速度受到 用于互连的亚微米金属线的电阻 装置. 解决互连效率低下问题的一种方法 是分层设备之间的垂直互连，这是3D的关键 一体化 由于IC制造传统上是二维的， 过程中，没有方法已经开发出创建垂直 亚微米直径的“线”。 这个电子升降机可以 通过选择性金属沉积工艺， 催化其自身的沉积，填充绝缘层中的井， 材料 选择性损失（LOS），导致 金属线，是由于与非催化绝缘体的反应， 气相反应、成核和沉积在绝缘体上， 以及沉积反应中间体之间的化学反应 反应 找到工艺余量是一个理解问题 所有的化学途径和相关的运输过程 均相和非均相反应。 LOS动力学 对于活性物种来说是相当复杂的， 寿命，并且只能通过原位诊断来观察。 这项研究的目的是回答一些非常具体的问题， 这些问题在商业或特高压反应堆中无法回答。 热扩散和再循环在LPCVD中的作用是什么 反应堆？ 什么是气相中间体，反应， 产品在选择性CVD？ 我们的LPCVD（1微米）结果如何 与我们在NSF资助的特高压研究中确定的那些相比？ 从长远来看，这项研究将有助于了解 可以使用其它反应物来产生选择性沉积 垂直线和工艺裕度在局部方面是什么 组成和温度。 一旦已知选择性沉积的局部条件， 有必要实施商业的数学模型， 反应器，使得导致所述反应器的入口气体组合物 可以确定所需的近晶片组成。 这一全球 模型还必须包括模型的瞬态内 亚微米级的井 目前的模式将扩展到新的 化学

The computation speed of modern computers is limited by the resistance of the submicron metal lines used to interconnect devices. One solution to the problem of inefficient interconnect is a vertical interconnect between layered devices, a key to 3-D integration. Because IC fabrication is traditionally 2-D procedure, no method has been developed to create vertical submicron diameter "wires". This electron elevator could be made by a selective metal deposition process whereby a material catalyzed its own deposition, filling a well in an insulating material. Loss of selectivity (LOS), leading to shorts between metal lines, is due to reaction with the noncatalytic insulator, gas phase reactions, nucleation and deposition on the insulator, and chemistries between reactive intermediates from the deposition reaction. Finding the process margin is a matter of understanding all of the chemical pathways and relevant transport processes of both the heterogeneous and homogeneous reactions. The LOS kinetics are quite complex for the reactive species, have very short lifetimes, and can only be seen with in situ diagnostics. The goal of the research is to answer some very specific questions which cannot be answered in commercial or UHV reactors. What is the role of thermodiffusion and recirculation in LPCVD reactors? What are the gas phase intermediates, reactions, and products during selective CVD? How do our LPCVD (1 torr) results compare with those we determine in the UHV studies funded by NSF? Over the long term, the research will lead to understanding what other reactants could be used to create selectively deposited vertical wires and what the process margins are in terms of local composition and temperature. Once the local conditions are known for selective deposition, it becomes necessary to implement mathematical models of commercial reactors so that the inlet gas composition which results in the desired near wafer composition can be determined. This global model must also include modeling of the transience within the submicron well as it fills. Current models will be extended to new chemistries.