Controlled thermoelectric properties of low-dimensional charge carrier systems in semiconductor heterostructures
Controlled thermoelectric properties of low-dimensional charge carrier systems in semiconductor heterostructures
批准号:
121158905
负责人:
Professor Dr. Hartmut Buhmann
金额:
$0.0万
依托单位国家:
德国
项目类别:
Priority Programmes
财政年份:
2009
资助国家:
德国
项目状态:
已结题
起止时间:
2008-12-31 至 2017-12-31
中文摘要
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英文摘要
Thermoelectric properties of low-dimensional charge-carrier systems in high-quality semiconductor heterostructures are studied experimentally and theoretically. The project focuses on systems, in which the energy spectrum is controllable to a high extent via external parameters. They can be viewed as model systems for the engineering of nanoscale objects and devices with tailored thermoelectric properties. Experiments are performed on two-dimensional systems, embedded in nanoscrolls, quasi-onedimensional wires as well as zero-dimensional coupled quantum dot systems in modulation doped III-V heterostructures. Device structures are prepared by means of electron-beam lithography. Consequences for the thermopower due to the coexistence of coherent and incoherent transport processes will be addressed in detailed theoretical studies.
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资助金额:$0.0万
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财政年份:2009
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负责人:Professor Dr. Hartmut Buhmann
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依托单位:
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批准号:22375214
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资助金额:50.00万元
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依托单位:
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依托单位: