Controlled charge and spin currents in surface states of a toplogical insulator

拓扑绝缘体表面态的受控电荷和自旋电流

• 批准号: 237596888
• 负责人: Professor Dr. Hartmut Buhmann
• 金额: --
• 依托单位: Lehrstuhl für Experimentelle Physik III
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2013
• 资助国家: 德国
• 起止时间: 2012-12-31 至 2019-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/237596888?language=en
• 关键词: Controlled; charge; spin; currents; surface

This project addresses the fundamental properties of surface state transport in a topological insulator (TI). During the first part of this project the lithographic device preparation played the dominant role. Electrostatically clean surfaces are the prerequisite for the investigation of transport in TI systems. For the second part of this project samples of very high quality are available and dedicated lithographic processes will allow us to fabricated devices which show the undisturbed surface state transport. In this project we will continue to investigate the transport in helical edge channels of a 2D TI and here especially the stability against impurity, phonon and electron-electron scattering introduced by applying artificial scattering potential, external magnetic field and various temperatures. Furthermore, the availability of high quality 3D TI samples and fabrication technologies opens up the possibility to explore the fundamental transport properties of spin-momentum locked 2D Dirac electrons. Both parts are aiming at the feasibility of device concepts for spintronic applications, a goal which is aspired since long but where no significant progress has been achieved so far. This goal however has become a realistic prospect now within this project.

本计画探讨拓扑绝缘体表面态输运的基本性质。在这个项目的第一部分，光刻设备的准备发挥了主导作用。静电清洁的表面是研究TI系统中传输的先决条件。对于这个项目的第二部分，非常高质量的样品是可用的，专用的光刻工艺将使我们能够制造显示不受干扰的表面状态传输的设备。在这个项目中，我们将继续研究2D TI的螺旋边缘通道中的输运，特别是对杂质，声子和电子-电子散射的稳定性，通过施加人工散射势，外部磁场和各种温度。此外，高质量的3D TI样品和制造技术的可用性开辟了探索自旋动量锁定的2D狄拉克电子的基本输运性质的可能性。这两个部分的目标是自旋电子应用的器件概念的可行性，这是一个长期以来一直渴望的目标，但迄今为止还没有取得重大进展。然而，这个目标现在已经成为这个项目中一个现实的前景。