Artificial Atoms

人造原子

• 批准号: 9732579
• 负责人: Marc Kastner
• 金额: $ 28.5万
• 依托单位: Massachusetts Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-07-01 至 2001-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9732579&HistoricalAwards=false
• 关键词: Artificial; Atoms

9732579 Kastner The research suggested in this proposal concerns the properties of quantum dots and single electron transistors. The properties of these quantum dots ("artificial atoms") are sufficiently different from ordinary electronic devices to require fundamental studies with the long range goal of translating these novel structures into technologically mature systems. This requires determining the energy levels and transition probabilities for these artificial atoms whose diameters are typically 1000 times the size of ordinary atoms. Transistors based on the artificial atom principle, the "single electron transistors" (SET), are the goal of the next generation of electronic devices. The research proposed here focuses on two topics, namely 1) how do electrons in an artificial atom interact with those in nearby metallic leads and 2) what is the nature of the phase transitions of the electron droplets in high magnetic fields. The coupling of topic 1) is believed to be give rise to behaviors closely related to the Kondo effect, which results from the coupling of localized electrons on a magnetic impurity to the Fermi liquid in a host metal. The second topic relates to the magnetic field induced phase transition from a singlet state to the ferromagnetic state in droplets with many electrons. The Kondo problem will be investigated for SETs carrying various numbers of electrons. The phase transitions will be studied by measuring the magnetic susceptibilties for magnetic fields greater than the critical field of ca. 1.7 tesla. %%% Research suggested in this proposal deals with fundamental problems of the behavior of quantum dots, also called artificial atoms. Such systems have great potential to become nano-scale electronic components, including "single electron transistors" (SETs), which will become the heart of the next generation of practical electronic devices. The properties of quantum dots are so different from those of ordinary atoms that the fundamental physics governing their behavior is not yet fully understood. Such understanding will facilitate a more efficient and controlled manufacture of SETs and their incorporation in practical technological devices. Two problems are attacked in the research described in this proposal. Both of them deal with electric current flow into and out of the SETs via the leads made of ordinary metal. ***

小行星9732579 的 该提案中建议的研究涉及量子点和单电子晶体管的性质。 这些量子点（“人造原子”）的性质与普通电子设备有很大的不同，需要进行基础研究，以将这些新结构转化为技术成熟的系统。 这需要确定这些人造原子的能级和跃迁概率，这些人造原子的直径通常是普通原子的1000倍。 基于人工原子原理的晶体管，即“单电子晶体管”（SET），是下一代电子器件的目标。 本文的研究主要集中在两个方面：1）人工原子中的电子如何与附近金属引线中的电子相互作用; 2）强磁场中电子液滴相变的性质。 课题1）的耦合被认为是引起与近藤效应密切相关的行为，近藤效应是由磁性杂质上的局域电子与主体金属中的费米液体耦合引起的。 第二个主题涉及到磁场诱导的相变从单重态铁磁态的液滴与许多电子。 近藤问题将进行调查的设置携带不同数量的电子。 相变将被研究 通过测量大于临界场Ca的磁场的磁导率。1.7特斯拉 该提案中建议的研究涉及量子点（也称为人造原子）行为的基本问题。 这样的系统具有成为纳米级电子元件的巨大潜力，包括“单电子晶体管”（SET），它将成为下一代实用电子器件的核心。 量子点的性质与普通原子的性质如此不同，以至于控制其行为的基本物理学尚未完全理解。 这样的理解将促进更有效和受控的制造。 SET及其在实际技术设备中的结合。 两个问题是攻击在 本提案中所述的研究。它们都处理电流通过普通金属制成的引线流入和流出SET。 ***