Nanometer - Size Electronic Devices

纳米尺寸电子器件

• 批准号: 8813250
• 负责人: Marc Kastner
• 金额: $ 53.04万
• 依托单位: Massachusetts Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-11-01 至 1992-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8813250&HistoricalAwards=false
• 关键词: Nanometer; Size; Electronic; Devices

The goal of this research program is to fabricate semiconductor devices small enough that new quantum-mechanical phenomena can be observed. Silicon MOSFET's will be produced with narrow 25 nm width gates. The conductance of these devices will be studied at low temperatures and high magnetic fields. Recent results indicate that electron-electron interactions may be altered in such confined geometries. To better understand the nature of the high-conductance state observed at high magnetic fields, a variety of split-gate devices will be fabricated with various widths but with constant ratio of length to width. By keeping this aspect ratio constant on passing from very narrow to wide devices, the researchers expect to observe the evolution of the high-field state in the confined geometry into the quantum Hall state. In this way, the dependence of the properties of the high field state on width can be measured. Experiments on the magnetic field dependence of the step-gate devices will be carried out of the Francis Bitter National Manget Laboratory.

这项研究计划的目标是制造足够小的半导体器件，以便观察到新的量子力学现象。硅MOSFET将生产窄的25纳米宽度栅极。这些器件的电导将在低温和高磁场下进行研究。最近的结果表明，电子-电子相互作用可能在这种受限的几何形状中被改变。为了更好地理解在高磁场下观察到的高电导状态的性质，将制作各种宽度不同但长宽比恒定的分栅器件。通过在从非常窄的器件过渡到宽的器件时保持这个宽高比不变，研究人员希望观察到在受限几何结构中的高场态向量子霍尔态的演变。通过这种方法，可以测量出高场态性质对宽度的依赖关系。阶梯门器件的磁场依赖性实验将在Francis Bitter国家Manget实验室进行。