Nanometer - Size Electronic Devices

这项研究计划的目标是制造足够小的半导体器件，以便观察到新的量子力学现象。硅MOSFET将用25 nm宽的窄栅极生产。这些器件的电导将在低温和强磁场下进行研究。最近的结果表明，电子-电子相互作用可以在这样的受限几何结构中改变。为了更好地理解在强磁场下观察到的高电导状态的本质，将制造各种具有不同宽度但具有恒定长宽比的分裂栅器件。通过保持从非常窄的器件到宽的器件的高宽比恒定，研究人员希望观察到受限几何中的高场状态向量子霍尔态的演化。通过这种方式，可以测量高场状态的性质对宽度的依赖关系。阶跃栅极器件的磁场依赖性实验将在弗朗西斯·比特国家Manget实验室进行。

The goal of this research program is to fabricate semiconductor devices small enough that new quantum-mechanical phenomena can be observed. Silicon MOSFET's will be produced with narrow 25 nm width gates. The conductance of these devices will be studied at low temperatures and high magnetic fields. Recent results indicate that electron-electron interactions may be altered in such confined geometries. To better understand the nature of the high-conductance state observed at high magnetic fields, a variety of split-gate devices will be fabricated with various widths but with constant ratio of length to width. By keeping this aspect ratio constant on passing from very narrow to wide devices, the researchers expect to observe the evolution of the high-field state in the confined geometry into the quantum Hall state. In this way, the dependence of the properties of the high field state on width can be measured. Experiments on the magnetic field dependence of the step-gate devices will be carried out of the Francis Bitter National Manget Laboratory.