Electrochemical Deposition of Metals on Silicon

Peter C.教授Searson将开发一个实验和理论框架来描述铜和金在硅上的电化学沉积，并表征结的微观结构和电学特性。将使用多种技术的组合，主要是电化学分析，电化学阻抗谱，原位微波反射率，扫描探针显微镜，电子显微镜和X射线衍射。该项目将导致在电解质-半导体界面和金属沉积的电荷转移的机制的确定;在掺杂的半导体表面的离子还原的动力学，以及金属成核和生长。深入了解界面化学和材料性能（微观结构，形态和电气性能）之间的关系。这将为在半导体表面沉积具有可控肖特基或欧姆特性的高质量、均匀的金属膜提供科学依据。

Prof. Peter C. Searson will develop an experimental and theoretical framework to describe the electrochemical deposition of copper and gold on silicon, and to characterize the microstructure and electrical properties of the junctions. A combination of techniques will be used, primarily electrochemical analysis, electrochemical impedance spectroscopy, in situ microwave reflectivity, scanning probe microscopy, electron microscopy, and x-ray diffraction. The project will result in the determination of the mechanism of the charge transfer at the electrolyte-semiconductor interface and of the metal deposition; the kinetics of the ion reduction at the doped semiconductor surface, and of the metal nucleation and growth. Insight will be gained on the relationship between interfacial chemistry and materials properties (microstructure, morphology, and electrical properties). A scientific basis will be provided for the deposition of high quality, uniform metal films on semiconductor surfaces, with controlled Schottky or ohmic characteristics.