Electrochemical Deposition of Metals on Silicon

硅上金属的电化学沉积

• 批准号: 9732782
• 负责人: Peter Searson
• 金额: $ 25万
• 依托单位: Johns Hopkins University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-06-15 至 2002-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9732782&HistoricalAwards=false
• 关键词: Electrochemical; Deposition; Metals; Silicon

Prof. Peter C. Searson will develop an experimental and theoretical framework to describe the electrochemical deposition of copper and gold on silicon, and to characterize the microstructure and electrical properties of the junctions. A combination of techniques will be used, primarily electrochemical analysis, electrochemical impedance spectroscopy, in situ microwave reflectivity, scanning probe microscopy, electron microscopy, and x-ray diffraction. The project will result in the determination of the mechanism of the charge transfer at the electrolyte-semiconductor interface and of the metal deposition; the kinetics of the ion reduction at the doped semiconductor surface, and of the metal nucleation and growth. Insight will be gained on the relationship between interfacial chemistry and materials properties (microstructure, morphology, and electrical properties). A scientific basis will be provided for the deposition of high quality, uniform metal films on semiconductor surfaces, with controlled Schottky or ohmic characteristics.

Peter C.Searson教授将开发一个实验和理论框架来描述在硅上电化学沉积铜和金的过程，并表征结的微结构和电学性质。将使用多种技术，主要是电化学分析、电化学阻抗谱、原位微波反射率、扫描探针显微镜、电子显微镜和X射线衍射。该项目将确定电解液-半导体界面的电荷转移和金属沉积的机制；掺杂半导体表面的离子还原动力学，以及金属的成核和生长。本课程将深入了解界面化学与材料性能(微观结构、形态和电学性能)之间的关系。这将为在半导体表面沉积具有可控肖特基或欧姆特性的高质量、均匀的金属薄膜提供科学依据。