CAREER: Atomic Mechanisms at Interfaces and Defects in Semiconducting Materials

职业：半导体材料界面和缺陷的原子机制

• 批准号: 9733895
• 负责人: Nigel Browning
• 金额: $ 30万
• 依托单位: University of Illinois at Chicago
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-04-01 至 2002-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9733895&HistoricalAwards=false
• 关键词: CAREER; Atomic; Mechanisms; Interfaces; Defects

9733895 Browning The objective of this CAREER project is to develop a comprehensive research and education program linked to the next generation of semiconducting materials and devices. The project strives for an atomic level understanding of structure-property relationships in semiconducting materials, and a parallel materials science education program. The research will utilize recently developed correlated atomic resolution Z-contrast imaging and electron energy loss spectroscopy (EELS) techniques in a scanning transmission electron microscope (STEM) to probe internal interfaces and defects in semiconductors with the goal of determining atomic structure, composition and electronic structure at individual atomic sites. Electronic and optical properties of individual interfaces or defects will be modeled and the overall material properties constructed from fundamental atomic properties. Unlike traditional high-resolution imaging techniques, where images and simulations must be matched, this approach allows real materials defects and interfaces to be investigated. Research will include GaN and SiC, ITO/n-GaAs, ZnSe/Fe magnetic multilayers, and the effect of nitrogen on the oxidation of Si and SiGe for VLSI. The project involves established collaborations with university materials growth groups and with industry, incorporating feedback between growth and characterization related to advanced device concepts and developments. Atomic scale research studies of semiconductors are ideal for the integration of research and education. Links between the operation of an everyday object such as a CD-player or computer, and the atomic structure of its components, will be used to emphasize basic features of materials science, and the excitement of discovery. Similar project based learning ideas will also be incorporated into the undergraduate curriculum. The PI will be teaching a new course in experimental materials physics, where the focus will be on fundamental character ization and applications of materials. Running parallel to this will be a graduate course, where experiments will be carried out at higher levels of sophistication, and related to real world applications. %%% The project addresses leading edge research and education issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to electronic materials and advanced device concepts. An important feature of the program is the emphasis on education, and on the integration of research and education through the training of students in a fundamentally and technologically significant research area. ***

这个CAREER项目的目标是开发一个与下一代半导体材料和器件相关的综合研究和教育计划。该项目致力于从原子层面理解半导体材料的结构-性质关系，以及平行的材料科学教育计划。该研究将利用扫描透射电子显微镜（STEM）中最近开发的相关原子分辨率z对比成像和电子能量损失光谱（EELS）技术来探测半导体的内部界面和缺陷，目的是确定单个原子位点的原子结构、组成和电子结构。单个界面或缺陷的电子和光学特性将被建模，并从基本原子特性构建整体材料特性。与传统的高分辨率成像技术不同，图像和模拟必须匹配，这种方法允许研究真实的材料缺陷和界面。研究将包括GaN和SiC， ITO/n-GaAs， ZnSe/Fe磁性多层膜，以及氮对VLSI中Si和SiGe氧化的影响。该项目涉及与大学材料增长小组和工业界建立合作关系，结合与先进设备概念和开发相关的增长和特性之间的反馈。半导体的原子尺度研究是理想的研究和教育的整合。日常物品（如cd播放机或计算机）的操作与其组成部分的原子结构之间的联系，将被用来强调材料科学的基本特征，以及发现的兴奋。类似的基于项目的学习理念也将被纳入本科课程。PI将教授实验材料物理学的新课程，重点是材料的基本特征和应用。与此并行的是一门研究生课程，其中的实验将在更高的复杂水平上进行，并与现实世界的应用相关。该项目涉及具有高技术相关性的材料科学主题领域的前沿研究和教育问题。该研究将为电子材料和先进器件概念提供基础材料科学知识。该计划的一个重要特点是强调教育，并通过培养学生在一个根本性和技术上重要的研究领域的研究和教育的整合。＊＊＊