CAREER: Atomic Mechanisms at Interfaces and Defects in Semiconducting Materials

9733895布朗宁 该项目的目标是开发一个与下一代半导体材料和器件相关的综合研究和教育计划。该项目致力于在原子水平上理解半导体材料的结构-性能关系，以及平行的材料科学教育计划。该研究将利用扫描透射电子显微镜（STEM）中最近开发的相关原子分辨率Z衬度成像和电子能量损失谱（EELS）技术来探测半导体中的内部界面和缺陷，目标是确定单个原子位置的原子结构，组成和电子结构。个别界面或缺陷的电子和光学性质将被建模，而整体材料性质将从基本原子性质构建。与传统的高分辨率成像技术不同，图像和模拟必须匹配，这种方法允许研究真实的材料缺陷和界面。研究将包括GaN和SiC，ITO/n-GaAs，ZnSe/Fe磁性多层膜，以及氮对VLSI中Si和SiGe氧化的影响。该项目涉及与大学材料生长小组和行业的合作，结合与先进设备概念和开发相关的生长和表征之间的反馈。半导体的原子尺度研究是研究与教育相结合的理想选择。CD播放器或计算机等日常物品的操作与其组件的原子结构之间的联系，将用于强调材料科学的基本特征和发现的兴奋。类似的基于项目的学习理念也将纳入本科课程。PI将教授实验材料物理学的新课程，重点是材料的基本特性和应用。与此同时，将开设一门研究生课程，在那里将进行更高层次的复杂实验，并与真实的世界应用有关。 该项目解决了材料科学领域的前沿研究和教育问题，具有很高的技术相关性。 该研究将为电子材料和先进器件概念提供基础材料科学知识。该计划的一个重要特点是强调教育，并通过在基础和技术上重要的研究领域培养学生，将研究与教育相结合。 ***

9733895 Browning The objective of this CAREER project is to develop a comprehensive research and education program linked to the next generation of semiconducting materials and devices. The project strives for an atomic level understanding of structure-property relationships in semiconducting materials, and a parallel materials science education program. The research will utilize recently developed correlated atomic resolution Z-contrast imaging and electron energy loss spectroscopy (EELS) techniques in a scanning transmission electron microscope (STEM) to probe internal interfaces and defects in semiconductors with the goal of determining atomic structure, composition and electronic structure at individual atomic sites. Electronic and optical properties of individual interfaces or defects will be modeled and the overall material properties constructed from fundamental atomic properties. Unlike traditional high-resolution imaging techniques, where images and simulations must be matched, this approach allows real materials defects and interfaces to be investigated. Research will include GaN and SiC, ITO/n-GaAs, ZnSe/Fe magnetic multilayers, and the effect of nitrogen on the oxidation of Si and SiGe for VLSI. The project involves established collaborations with university materials growth groups and with industry, incorporating feedback between growth and characterization related to advanced device concepts and developments. Atomic scale research studies of semiconductors are ideal for the integration of research and education. Links between the operation of an everyday object such as a CD-player or computer, and the atomic structure of its components, will be used to emphasize basic features of materials science, and the excitement of discovery. Similar project based learning ideas will also be incorporated into the undergraduate curriculum. The PI will be teaching a new course in experimental materials physics, where the focus will be on fundamental character ization and applications of materials. Running parallel to this will be a graduate course, where experiments will be carried out at higher levels of sophistication, and related to real world applications. %%% The project addresses leading edge research and education issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to electronic materials and advanced device concepts. An important feature of the program is the emphasis on education, and on the integration of research and education through the training of students in a fundamentally and technologically significant research area. ***