Ion-Beam Scattering and Modification of Thin Film Growth: From Atomistics to Applications

离子束散射和薄膜生长的改性：从原子学到应用

• 批准号: 9810058
• 负责人: Scott Barnett
• 金额: $ 36.64万
• 依托单位: Northwestern University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-09-01 至 2002-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9810058&HistoricalAwards=false
• 关键词: Ion; Beam; Scattering; Modification; Thin

9810058 Barnett This project seeks to use 1-3 kev He and Ar ion beams to monitor and modify semiconductor surfaces using the specular scattered beam intensity to quantitatively determine surface defect densities, surface compositions, and to influence the orientation of grains of polycrystalline thin films. Experiments to measure alloy composition, segregation, interdiffusion, desorption, and surfactant effects will be carried out. The combination of ion-beam orientation with annealing will also be investigated as a method for preparing highly-oriented semiconductor films. Potential applications for decreasing electromigration by eliminating high-angle grain boundaries in metal films will also be explored. %%% The project addresses basic research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices. Experimental tools such as those being investigated on this project allow atomic level observation of basic surface processes which when better understood provide the basis for advances in both fundamental and technological arenas. The basic knowledge and understanding gained from the research is expected to contribute to improving the performance and stability of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

该项目旨在使用1-3 kev He和Ar离子束来监测和修改半导体表面，使用反射散射光束强度定量确定表面缺陷密度，表面成分，并影响多晶薄膜晶粒的取向。实验测量合金成分，偏析，相互扩散，脱附和表面活性剂的影响将进行。将离子束取向与退火相结合作为制备高取向半导体薄膜的方法也将被研究。通过消除金属薄膜中的高角度晶界来减少电迁移的潜在应用也将被探讨。该项目涉及具有高技术相关性的材料科学主题领域的基础研究问题。该研究将在基础层面上为电子/光子器件的重要方面贡献基础材料科学知识。在这个项目中正在研究的实验工具允许对基本表面过程进行原子水平的观察，如果更好地理解这些过程，将为基础和技术领域的进步提供基础。从研究中获得的基本知识和理解预计将有助于提高先进器件和电路的性能和稳定性，为设计和生产改进的材料和材料组合提供基本的理解和基础。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。＊＊＊