Surface-Emitting High-Power(>0.1W) Single-Lobe, Single-Mode Diode Lasers

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Two novel concepts to achieve single-mode, single-lobe operation of high power surface emitting lasers are proposed. The first concept is to use a second-order complex-coupled grating for favoring of symmetric mode. The second concept is to use first-order Bragg grating reflectors on both sides of the second-order grating to insure a uniform near-field intensity profile. The devices will be made with InGaAs/InGaP/GaAs, Al-free, strained-layer quantum well structures. A 20-element anti-guide phase-locked laser array is expected to emit diffraction-limited beam, normal to the chip surface to power levels over a watt range.