SBIR Phase I: High Power, High Efficiency Micropixel Ultraviolet Light Emitting Lamp

SBIR第一期：高功率、高效率微像素紫外发光灯

• 批准号: 1113159
• 负责人: Iftikhar Ahmad
• 金额: --
• 依托单位: Nitek Incorporated
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-07-01 至 2012-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1113159&HistoricalAwards=false
• 关键词: SBIR; Phase; Power; Efficiency; Micropixel

This Small Business Innovation Research (SBIR) Phase I project will result in developing novel high-power, high-efficiency Deep Ultraviolet Light Emitting Diode (DUV LED) Lamps based on an innovative and new micro-pixel device design. Deep ultraviolet light sources with emission wavelengths lambda from 250 - 365 nm are used in many applications including water/air purification, analytical scientific instrumentation, bio-agent detection systems and emerging miniaturized bio-medical instrumentation. Aluminum-indium-gallium-nitride (AlInGaN) based DUVLEDs have recently been developed and commercialized. However at present their external quantum efficiency and output powers are only 1-2% and 1-2 mW in continuous operating mode. One of the primary causes of these low numbers is current crowding arising from the resistance of the n-AlGaN buffer layers. To address this challenge large area LEDs with micro-pixel device geometry with expected output powers of 15-20mW and a stable operation with lifetime over 3000 hours are being developed. New approaches are being developed for the n-AlGaN buffer layers and the active layers deposition to increase their thickness, avoid cracking, and reduce their resistance and defects. The broader impact/commercial potential of this project represents a new opportunity for developing semiconductor materials based solid-state deep ultraviolet light sources. The targeted performance will allow for penetration into large existing UV market segments such as water purification, medical instrumentation and UV polymer curing. The deep ultraviolet optoelectronic field continues to grow each year and the expertise gained through this program will contribute to the advancement of novel DUV light sources. The project will also lead to jobs for graduates from local Universities and Technical Institutes thereby fostering high-tech economic development in the state of South Carolina. Moreover the project will significantly enhance the knowledge base in high-aluminum content AlInGaN materials science, their epitaxial deposition and processing and packaging. There is a very high probability of transitioning the knowledge base and the developed technology to commercial products for disinfection/purification and polymer curing markets.

这项小型企业创新研究（SBIR）I阶段项目将导致基于创新和新的微像素设备设计的新型高功率，高效的深紫外线发光二极管（DUV LED）灯。从250-365 nm发射波长Lambda的深紫外光源在许多应用中都使用，包括水/空气纯化，分析科学仪器，生物代理检测系统和新兴的微型生物医学仪器。最近已经开发和商业化了基于铝的氮化铝（阿林加）二氮化物（Alingan）。但是，目前，在连续工作模式下，其外部量子效率和输出功率仅为1-2％和1-2 MW。这些较低数字的主要原因之一是由于N-α缓冲层的电阻引起的当前拥挤。为了应对这一挑战，具有微像素设备几何形状的大面积LED，预期输出功率为15-20MW，并且正在开发出3000多个小时以上寿命的稳定操作。正在为N-Algan缓冲层和活动层沉积开发新方法，以增加其厚度，避免破裂并降低其阻力和缺陷。 该项目的更广泛的影响/商业潜力代表了开发基于半导体材料的固态深紫外线光源的新机会。有针对性的性能将允许渗透到现有的大型紫外线细分市场中，例如水纯化，医疗仪器和紫外线聚合物固化。 深层紫外光电领域每年都在增长，通过该计划获得的专业知识将有助于新型DUV光源的发展。该项目还将为当地大学和技术机构的毕业生提供就业机会，从而促进了南卡罗来纳州的高科技经济发展。 此外，该项目将显着增强高铝含量材料科学的知识库，其外延沉积，加工和包装。 将知识库和开发技术转换为商业产品的可能性很高，以进行消毒/纯化和聚合物固化市场。