SBIR Phase I: High Power, High Efficiency Micropixel Ultraviolet Light Emitting Lamp

SBIR第一期：高功率、高效率微像素紫外发光灯

• 批准号: 1113159
• 负责人: Iftikhar Ahmad
• 金额: --
• 依托单位: Nitek Incorporated
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-07-01 至 2012-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1113159&HistoricalAwards=false
• 关键词: SBIR; Phase; Power; Efficiency; Micropixel

This Small Business Innovation Research (SBIR) Phase I project will result in developing novel high-power, high-efficiency Deep Ultraviolet Light Emitting Diode (DUV LED) Lamps based on an innovative and new micro-pixel device design. Deep ultraviolet light sources with emission wavelengths lambda from 250 - 365 nm are used in many applications including water/air purification, analytical scientific instrumentation, bio-agent detection systems and emerging miniaturized bio-medical instrumentation. Aluminum-indium-gallium-nitride (AlInGaN) based DUVLEDs have recently been developed and commercialized. However at present their external quantum efficiency and output powers are only 1-2% and 1-2 mW in continuous operating mode. One of the primary causes of these low numbers is current crowding arising from the resistance of the n-AlGaN buffer layers. To address this challenge large area LEDs with micro-pixel device geometry with expected output powers of 15-20mW and a stable operation with lifetime over 3000 hours are being developed. New approaches are being developed for the n-AlGaN buffer layers and the active layers deposition to increase their thickness, avoid cracking, and reduce their resistance and defects. The broader impact/commercial potential of this project represents a new opportunity for developing semiconductor materials based solid-state deep ultraviolet light sources. The targeted performance will allow for penetration into large existing UV market segments such as water purification, medical instrumentation and UV polymer curing. The deep ultraviolet optoelectronic field continues to grow each year and the expertise gained through this program will contribute to the advancement of novel DUV light sources. The project will also lead to jobs for graduates from local Universities and Technical Institutes thereby fostering high-tech economic development in the state of South Carolina. Moreover the project will significantly enhance the knowledge base in high-aluminum content AlInGaN materials science, their epitaxial deposition and processing and packaging. There is a very high probability of transitioning the knowledge base and the developed technology to commercial products for disinfection/purification and polymer curing markets.

该小型企业创新研究（SBIR）第一阶段项目将基于创新和新型微像素器件设计开发新型高功率，高效率深紫外线发光二极管（DUV LED）灯。发射波长λ为250 - 365 nm的深紫外光源用于许多应用，包括水/空气净化、分析科学仪器、生物制剂检测系统和新兴的小型化生物医学仪器。基于氮化铝铟镓（AlInGaN）的DUVLED最近已经被开发和商业化。但目前它们的外量子效率和连续工作时的输出功率仅为1- 2 mW和1- 2%。这些低数字的主要原因之一是由n-AlGaN缓冲层的电阻引起的电流拥挤。为了解决这一挑战，正在开发具有微像素器件几何形状的大面积LED，其具有15- 20 mW的预期输出功率和超过3000小时的寿命的稳定操作。目前正在开发用于n-AlGaN缓冲层和有源层沉积的新方法，以增加它们的厚度，避免开裂，并减少它们的电阻和缺陷。 该项目更广泛的影响/商业潜力为开发基于半导体材料的固态深紫外光源提供了新的机会。目标性能将允许渗透到现有的大型紫外线细分市场，如水净化，医疗仪器和紫外线聚合物固化。 深紫外光电子领域每年都在持续增长，通过该计划获得的专业知识将有助于新型DUV光源的发展。该项目还将为当地大学和技术学院的毕业生提供就业机会，从而促进南卡罗来纳州的高科技经济发展。 此外，该项目将显著增强高铝含量AlInGaN材料科学、外延沉积、加工和封装方面的知识基础。 将知识库和开发的技术转化为用于消毒/净化和聚合物固化市场的商业产品的可能性非常高。