SBIR Phase I: In-Situ, Real-Time Process Control for Micro-Electro-Mechanical System (MEMS) Applications

SBIR 第一阶段：微机电系统 (MEMS) 应用的原位实时过程控制

• 批准号: 9860514
• 负责人: Sylvie Charpenay
• 金额: $ 9.99万
• 依托单位: On-Line Technologies Incorporated
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-01-01 至 1999-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9860514&HistoricalAwards=false
• 关键词: SBIR; Phase; Situ; Real; Time

9860514 This Small Business Innovation Research Project will develop an in-situ, real-time process control tool for micro-electric-mechanical system (MEMS) deep-etch fabrication. Deep etch processes are used to manufacture high aspect ratio structures up to several hundred microns thick, which would be difficult or impossible to produce by other methods. Deep-etch and other MEMS technologies promiseto deliver new devices with increased performance and functionality at lower cost. A major difficulty in deep-etch technology is the control of the etch depth during the etching process. Currently etch depth is measured post-etch using ex-situ destructive scanning electron microscopy. This is extremely inefficient, and is a major hurdle to be surmounted before extensive production takes place. Preliminary measurements at On-Line Technologies have demonstrated that it is possible to monitor the etch depth through the analysis of the infrared reflectance spectrum. In Phase I, an etch depth sensor will be constructed incorporating a Fourier transform infrared based reflectometer and analysis algorithms. The sensor will be integrated onto a deep-etch tool for in-situ testing, and data will be collected and analyzed in real-time during the etch process. The specific anticipated results of the use of the proposed metrology are: (1) to reduce cost through the reduction of destructive measurements and the improvement in process control; (2) to increase the reproducibility of the MEMS structures through better process control; and (3) to provide useful feed-back for process development, thus reducing development time. These results will have a great impact on the deep-etch MEMS market, as they will help future MEMS applications to mature and come to market at a faster pace through cheaper characterization and improved process control.

9860514 这个小企业创新研究项目将开发一种用于微机电系统（MEMS）深蚀刻制造的原位实时工艺控制工具。深蚀刻工艺用于制造高达几百微米厚的高纵横比结构，这将难以或不可能通过其他方法生产。深蚀刻和其他MEMS技术有望以更低的成本提供具有更高性能和功能的新器件。深蚀刻技术中的主要困难是在蚀刻工艺期间控制蚀刻深度。目前，蚀刻深度是使用非原位破坏性扫描电子显微镜在蚀刻后测量的。这是非常低效的，是在进行大规模生产之前需要克服的一个主要障碍。 在线技术公司的初步测量结果表明，通过分析红外反射光谱可以监测蚀刻深度。在第一阶段，将建造一个蚀刻深度传感器，它将结合一个基于傅立叶变换红外反射计和分析算法。该传感器将被集成到一个深蚀刻工具上进行原位测试，并在蚀刻过程中实时收集和分析数据。 使用所提出的计量学的具体预期结果是：（1）通过减少破坏性测量和改进工艺控制来降低成本;（2）通过更好的工艺控制来增加MEMS结构的再现性;以及（3）为工艺开发提供有用的反馈，从而减少开发时间。这些结果将对深蚀刻MEMS市场产生重大影响，因为它们将有助于未来的MEMS应用成熟，并通过更便宜的表征和改进的工艺控制更快地进入市场。