SBIR Phase I: Autometallographic Fabrication of Copper Interconnects

SBIR 第一阶段：铜互连的自动金相制造

• 批准号: 9860786
• 负责人: Richard Powell
• 金额: $ 10万
• 依托单位: Nanoprobes Incorporated
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-01-01 至 1999-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9860786&HistoricalAwards=false
• 关键词: SBIR; Phase; Autometallographic; Fabrication; Copper

9860786 This Small Business Innovation Phase I Project addresses a novel chemical approach to fabricating copper interconnects for integrated circuits. A silicon/silicon dioxide wafer surface will be patterned by electron beam writing using a charge-writing scanning electron microscope with lines 30 nm in width; these will then be decorated with positively charged l.4 nm gold nanoparticles from solution. These will be the seed layers for autometallographic deposition of metallic copper from a solution containing copper (II) ions in a selectively reducing environment. Before electron beam charge-writing is attempted, the individual steps in the process will be optimized using a modified xerographic or laser printer: instead of charged carbon, the amorphous selenium or cadmium sulfide transfer roller will be used to transfer the charged gold clusters onto membranes, where the patterns will be visualized by copper autometallography. The proposed approach may enable the fabrication of copper interconnects 30 nm (O.03 um) in width, significantly smaller than the 0.18 um which is the smallest current width, resulting in higher chip packing density and further miniaturizing the construction of electronic components. This chemical approach will also simplify IC fabrication by removing the photoresist masking and metal etch steps.

9860786 这个小型企业创新第一阶段项目采用了一种新颖的化学方法来制造集成电路的铜互连。使用电荷写入扫描电子显微镜以宽度为30nm的线通过电子束写入对硅/二氧化硅晶片表面进行图案化；然后用溶液中带正电的 1.4 nm 金纳米粒子装饰这些粒子。这些将成为在选择性还原环境中从含有铜 (II) 离子的溶液中自动金相沉积金属铜的种子层。在尝试电子束电荷写入之前，将使用改进的静电复印或激光打印机来优化该过程中的各个步骤：将使用非晶硒或硫化镉转移辊代替带电碳，将带电金簇转移到膜上，其中图案将通过铜自动金相术可视化。 所提出的方法可以实现宽度为 30 nm (O.03 um) 的铜互连的制造，明显小于最小电流宽度 0.18 um，从而提高芯片封装密度并进一步小型化电子元件的结构。这种化学方法还将通过消除光刻胶掩模和金属蚀刻步骤来简化 IC 制造。