Züchtung und Untersuchung von Volumenkristallen und Epitaxieschichten von beta-Ga2O3, In2O3, SnO2 und ZnO

从半导体科学和技术的角度对氧化物的探索为发现新的物理学以及开发具有前所未有的性能和功能的新型器件提供了巨大的机会。半导体二元氧化物（β-Ga_2 O_3、In_2 O_3、SnO_2、ZnO）作为新型宽带带隙电子材料的研究和开发是当前的热点。当生长为具有受控掺杂的高纯度外延膜时，如对非氧化物半导体（例如，Si，GaAs），它们作为一类新的半导体具有巨大的潜力（NSF合作伙伴UCSB）。在这种情况下，拟议的项目解决了一个主要的瓶颈，即同质外延（DFG合作伙伴IKZ和HU柏林）的大块衬底的可用性。虽然只有β-Ga 2 O3和ZnO晶体可以从熔体中生长，但由于强烈的蒸发，In 2 O3和SnO 2晶体必须通过助熔剂生长或通过气相生长。然而，到目前为止，这些晶体还没有足够的尺寸和高的完美性，用于高质量薄膜的基板。晶体生长将密切伴随着广泛的表征，包括光电发射和X射线吸收光谱（HU柏林）。

The exploration of oxides from the perspective of semiconductor science and technology offers great opportunities for uncovering new physics as well as developing novel devices with unprecedented performance and functionality. There is currently great interest in the exploration and development of semiconducting binary oxides (β-Ga2O3, In2O3, SnO2, ZnO) as new wideband- gap electronic materials. When grown as high purity epitaxial films with controlled doping, as carried out for non-oxide semiconductors (e.g., Si, GaAs), they have great potential as a new class of semiconductors (NSF-partner UCSB). In this context the proposed project addresses a major bottleneck, namely the availability of bulk substrates for homoepitaxy (DFG-partners IKZ and HU Berlin). Whereas only β-Ga2O3 and ZnO crystals can be grown from melt, due to strong evaporation In2O3 and SnO2 crystals have to be grown by flux growth or via vapor phase. However, so far these crystals are not available in sufficient size and high perfection for substrates for high quality films. The crystal growth will be closely accompanied by extensive characterization including photoemission and x-ray absorption spectroscopy (HU Berlin).