Ablation Plasma Ion Implantation

本文研究了一种新的离子源，用于固体靶材料的注入和合成。在这项新技术中，使用烧蚀等离子体离子注入（APII），固体目标（金属，陶瓷或半导体）的能量束烧蚀来产生离子脉冲，用于注入，离子辅助沉积或化合物合成。本研究旨在建立api知识库，并定义可用于评估工程应用的标度定律。使用的主要烧蚀源是工作频率为50 Hz的KrF准分子激光器；可供比较的其他烧蚀源包括电子束、XeCl激光器和YAG激光器。激光和光学诊断应用于表征烧蚀羽流种类，电子，原子和离子的密度和能量，以及鞘层的行为。

ABSTRACTCTS-9907106Ronald M. GligenbachThis is an investigation of a new ion source for implantation and synthesis of materials from solid targets. In this new technique, ablation plasma ion implantation (APII), energy-beam ablation of solid targets (metals, ceramics, or semiconductors) is used to generate pulses of ions for implantation, ion-assisted deposition, or synthesis of compounds. This study aims at development of a knowledge base on APII and the definition of scaling laws that can be used to evaluate engineering applications. The primary ablation source used is a KrF excimer laser operating at 50 Hz; other ablation sources available for comparison include e-beam, XeCl laser and YAG laser. Laser and optical diagnostics are applied to characterize the ablation plume species, the densities and energies of electrons , atoms, and ions, and the behavior of the sheath.