SBIR Phase I: Far UV Metrology of Semiconductors

SBIR 第一阶段：半导体的远紫外计量

• 批准号: 9960188
• 负责人: John Freeouf
• 金额: $ 9.9万
• 依托单位: Interface Studies Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-01-01 至 2000-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9960188&HistoricalAwards=false
• 关键词: SBIR; Phase; Far; UV; Metrology

This Small Business Innovation Research Phase I project will extend the photon energy range over which one performs ellipsometry to 9 eV, well beyond the current 'deep UV' systems which are limited to roughly 6.5 eV. Specifically, an instrument operating over the entire 3 eV to 9 eV photon energy range using conventional laboratory light sources is envisioned. This instrument would be used for material studies, at these higher energies, upon the wide band gap materials SiC and GaN, as well as some alternative dielectrics currently being developed. In both cases, many of the critical points characterizing the band structure are inaccessible to conventional equipment. We shall also emphasize studies of organic electronic materials, including issues such as void fraction, substrate dielectric dependence, and layer-dependent energy levels. Furthermore, this project provides a potential instrumental solution to critical issues facing the semiconductor device industry. It clearly meets the requirements identified in the National Technology Roadmap for gate dielectric metrology as being necessary but having no known solution. It is also required by 157 nm excimer laser lithography programs, one of the candidate technologies for Next Generation Lithography.

这个小型企业创新研究第一阶段项目将把椭圆偏振测量的光子能量范围扩展到9 eV，远远超过目前的“深紫外”系统，该系统仅限于大约6.5 eV。 具体地，设想了使用常规实验室光源在整个3eV至9eV光子能量范围内操作的仪器。 该仪器将用于材料研究，在这些更高的能量下，宽带隙材料SiC和GaN，以及目前正在开发的一些替代材料。 在这两种情况下，传统设备都无法获得表征能带结构的许多关键点。 我们也将强调有机电子材料的研究，包括空隙率、基底介电依赖性和层依赖性能级等问题。 此外，该项目为半导体器件行业面临的关键问题提供了潜在的工具解决方案。 它显然满足国家技术路线图中确定的要求，栅极电介质计量是必要的，但没有已知的解决方案。 157 nm准分子激光光刻技术也是下一代光刻技术的候选技术之一。