SBIR Phase I: III-V Nitride Structure for Far Infrared Detection

小企业创新研究第一阶段将探索用于微光远红外探测的新结构设计。 其目的是开发由III-V族氮化物半导体制成的多量子威尔斯，以实现优于现有技术的操作和成本优势。 在第一阶段，将设计和制造拟议的传感器。远红外吸收将在低温下得到证实。在第二阶段，将优化传感器设计和制造条件。将测量探测器的响应度、均匀性和动态范围，并将生产原型远红外传感器和焦平面阵列，供政府和商业评估。 该项目的成功完成将为在比现有技术更高的温度下工作的远红外提供更低成本的灵敏探测器。远红外传感和成像市场的规模超过10亿美元，目前的技术依赖于冷却，价格昂贵。 该技术的应用包括但不限于红外成像空间监视、公共安全和安保以及搜索和救援行动。多量子阱和超晶格红外探测器由于其可调的带隙和器件结构，在空间监视和成像应用中具有很好的应用前景。它们具有在杂乱环境中探测远距离目标的潜力。

This Small Business Innovation Research Phase I will explore new structure designs for low light level far infrared detection. The aim is to develop multi-quantum wells made of III-V nitride semiconductors to achieve operational and cost advantages over existing technologies. During Phase I, the proposed sensor will be designed and fabricated. Far infrared absorption will be demonstrated at low temperatures. In Phase II, sensor design and fabrication conditions will be optimized. The responsivity, uniformity, and dynamic range of detectors will be measured, and prototype far infrared sensors and focal plane arrays will be produced for governmental and commercial evaluations. Successful completion of the project will provide lower-cost sensitive detectors for the far infrared operating at higher temperatures than prior art. Far infrared sensing and imaging market is over $1 Billion in size, and current technologies rely on cooling and are expensive. The applications of the technology include but are not limited to infrared imaging space surveillance, public safety and security, and search and rescue operations. Multiquantum-well and superlattice infrared detectors are very promising for space surveillance and imaging applications because of their adjustable band gaps and device structures. They have the potential to detect targets at long ranges in cluttered environments.