Far UV Spectroscopic Ellipsometry of Electronic Materials

电子材料的远紫外光谱椭偏仪

• 批准号: 0218288
• 负责人: John Freeouf
• 金额: $ 24万
• 依托单位: Oregon Health & Science University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-09-01 至 2006-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0218288&HistoricalAwards=false
• 关键词: Far; UV; Spectroscopic; Ellipsometry; Electronic

0218288FreeoufThe objectives of this project are to build upon the successful construction of a Far UV spectroscopic ellipsometer and apply this tool to improve the PIs understanding of new materials - and of older materials becoming newly important. The PI intends to share the impact of this new, next-generation tool by collaborative research with a variety of colleagues from many disciplines throughout the country. The project should train at least one PhD student at OGI and assist the research efforts of others at many locations. This effort will emphasize materials of technological importance and concentrate upon proposed high-K gate dielectrics such as HfO2.This system offers a substantially increased photon energy limit (hv 9 eV) over conventional systems (hv 6.5 eV), thereby permitting us the PI to examine critical point structures that would otherwise only be accessible at a synchrotron radiation source. This energy range especially impacts studies of wide band gap materials; both dielectrics such as HfO2 and wide band gap semiconductors such as diamond, SiC, and GaN are of immediate and urgent interest. This permits the PI to impact the current semiconductor industry search for materials with which to replace SiO2 as the gate dielectric in CMOS technology. It has permitted the PI to study surface damage layers on polished SiC surfaces, since the higher energies available also offer increased sensitivity to surface films. He seeks funding to continue to apply this instrument to such studies. He has partnerships with several groups that seek to strengthen his own efforts by using the information available from the proposed studies.The specific area of emphasis will be on high-? dielectrics for future CMOS technologies. This international effort is driven by the fundamental limitation upon CMOS scaling that is imposed by the onset of tunneling through a thin barrier layer. This quantum mechanical effect appears to restrict the use of SiO2 based gate dielectrics, even with the addition of nitride layers, to greater than 1 .0 nm thickness, and will fundamentally impact device design and production in this decade. In fact, the 2001 editio of the International Technology Roadmap for Semiconductors envisions these materials being required by 2005 for low power logic chips. The PI has already applied his current system to the study of some of these materials and established that there are clear areas where he extended photon energy range provides new and unique information. He seeks to build a database of dielectric response for many of the candidate materials, and to use this database in the study of these films as deposited upon silicon substrates. His partnerships permit him to study materials deposited by e-beam, jet vapor deposition, molecular beam epitaxy, and atomic beam deposition. The details of these depositions can strongly alter the interface and the film itself - as he has demonstrated for HfO2 already. At the same time it is crucial to ascertain what impact absorption involving the d-levels of transition metal and rare earth elements in these candidate materials will have upon the electrical properties of transistors containing those materials. The PI's studies will help to clarify the location and properties of these energy levels.

0218288 Freeouf该项目的目标是建立在一个远紫外光谱椭偏仪的成功建设，并应用此工具，以提高新材料的PI的理解-旧的材料变得新的重要性。PI打算通过与来自全国各地许多学科的各种同事合作研究来分享这种新的下一代工具的影响。该项目应在OGI培训至少一名博士生，并在许多地方协助其他人的研究工作。这项工作将强调材料的技术重要性，并集中在建议的高K栅介质，如HfO 2。该系统提供了一个大大增加的光子能量限制（hv 9 eV）比传统的系统（hv 6.5 eV），从而使我们的PI检查临界点结构，否则只能在同步辐射源访问。这个能量范围特别影响宽带隙材料的研究;诸如HfO 2的晶体管和诸如金刚石、SiC和GaN的宽带隙半导体都具有直接和迫切的兴趣。这使得PI能够影响当前半导体工业寻找在CMOS技术中替代SiO2作为栅极电介质的材料。它允许PI研究抛光SiC表面上的表面损伤层，因为更高的能量也可以提高对表面膜的敏感性。他寻求资金，以继续将这一工具应用于此类研究。他与几个团体建立了伙伴关系，这些团体试图通过利用拟议研究中提供的信息来加强他自己的努力。未来CMOS技术的发展。这种国际努力是由CMOS缩放的基本限制所驱动的，CMOS缩放是由隧穿通过薄势垒层的开始所施加的。这种量子力学效应似乎限制了基于SiO2的栅介质的使用，即使添加了氮化物层，也要大于1.0 nm的厚度，并且将在这十年中从根本上影响器件设计和生产。事实上，2001年版的《国际半导体技术路线图》预计，到2005年，低功耗逻辑芯片将需要这些材料。PI已经将他目前的系统应用于其中一些材料的研究，并确定了他扩展光子能量范围提供新的独特信息的明确领域。他试图为许多候选材料建立一个介电响应数据库，并将此数据库用于研究沉积在硅衬底上的这些薄膜。他的合作伙伴关系使他能够研究通过电子束、喷射气相沉积、分子束外延和原子束沉积沉积的材料。这些沉积的细节可以强烈地改变界面和薄膜本身-正如他已经证明的HfO 2。与此同时，确定这些候选材料中过渡金属和稀土元素d能级的吸收将对含有这些材料的晶体管的电性能产生什么影响至关重要。PI的研究将有助于澄清这些能级的位置和性质。