SBIR Phase I: Sub-Nanosecond Spin Dependent Tunneling Devices

这个小型企业创新研究第一阶段项目将通过结合高速磁性薄膜和低电容SDT结构来开发亚纳秒开关自旋相关隧道（SDT）器件。 SDT器件具有高信号、低开关场和高电阻，这导致与巨磁阻（GMR）材料相比具有高灵敏度、低功耗、小尺寸和轻重量。 虽然SDT器件的开关速度被限制在几纳秒以上，但在过去几年中，快速电子器件的速度已经进入深亚纳秒范围。 为了制造快速SDT器件，必须显著减少器件中使用的磁性材料，并且必须保持现有的有吸引力的静态特性。 第一阶段将解决胶片转换和SDT结构/设计问题。 通过将高速磁性薄膜结合到具有快速电特性的新型SDT结构中，预期结果是集成的SDT器件具有最先进的静态特性，但开关速度远小于1纳秒。该技术在高速磁场和电流传感器件、高速/低功率隔离器、快速磁性随机存取存储器（MRAM）、下一代读取磁头以及千兆赫电感器/Transformer应用。

This Small Business Innovation Research Phase I project will develop subnanosecond switching spin dependent tunneling (SDT) devices by combining high speed magnetic thin films and low-capacitance SDT structures. SDT devices have high signal, low switching field, and high resistance, which lead to high sensitivity, low power consumption, and small size and weight, when compared with giant magnetoresistive (GMR) materials. While the switching speed of SDT devices is limited to longer than severalnanoseconds, the speed of fast electronics has gone into the deep sub-nanosecond regime in the past several years. In order to make fast SDT devices, the magnetic material used in the devices has to be significantly reduced, and existing attractive static properties have to be maintained. Phase I will address both film switching and SDT structure/design issues. By incorporating high-speed magnetic films into the new SDT structures with fast electrical characteristics, the result is expected to be integrated SDT devices with state-of-the-art static properties, but with switching speeds of much less than 1 nanosecond.There are several commercial applications for this technology in high-speed magnetic field and current sensing devices, high-speed/low-power isolaters, fast magnetic random access memories (MRAM), next generation read heads, as well as gigahertz inductor/transformer applications.