SBIR/STTR Phase I: Model-Guided Development of Spin-Dependent-Tunnel Junctions for Magnetoelectronic Devices

这一小型企业技术转移第一阶段计划将展示模型引导方法在磁电子器件中开发自旋相关隧道结的可行性。依赖于自旋的隧道结处于纳米技术的前沿，这项技术正在全球范围内进行密集的研究和开发。自旋相关的隧道器件有望在大约两年内在传感器、隔离器和存储器方面实现商业化。由于标称厚度为~1 nm的隧道势垒及其与两个铁磁层的界面的独特要求，仅靠实验方法在开发新的结方面效率低下。在制造过程中，迫切需要从逼真的建模中获得指导，而这个项目是专门为满足这一需求而设计的。将建立真实的原子模型，并将公正地选择实验来证明这种综合方法的可行性。磁随机存取存储器用于可重编程逻辑、读取头、通用磁场传感器和电流隔离器，是电子存储行业的重要组件。它们有可能应用于其他对薄层和界面至关重要的微电子设备中。

This Small Business Technology Transfer Phase I Program will demonstrate the feasibility of model-guided approach for developing spin dependent tunnel junctions in magnetoelectronic devices. Spin dependent tunnel junctions are at the forefront of nanotechnology that is under intensive research and development worldwide. Spin dependent tunnel devices are expected to be commercialized in about two years in sensor, isolator, and memory. Due to the unique requirements of the tunnel barrier with a nominal thickness of ~1nm and its interfaces with two ferromagnetic layers, an experimental approach by itself is inefficient in developing new junctions. There is a critical need for guidance from a realistic modeling in the fabrication processing, and this project is specifically designed to fulfill this need. Realistic atomistic modeling will be established and experiments will be judicially chosen to demonstrate the feasibility of this integrated approach. Magneto-random access memories are used in reprogrammable logic, read heads, generic magnetic field sensors, and galvanic isolators and are important components for the electronic storage industry. They have the potential to be applied in other microelectronic devices where thin layers and interfaces are critical.