SBIR/STTR Phase I: Model-Guided Development of Spin-Dependent-Tunnel Junctions for Magnetoelectronic Devices

这项小型企业技术转移第一阶段计划将展示模型引导方法在磁电子器件中开发依赖自旋的隧道结的可行性。依赖自旋的隧道结处于纳米技术的前沿，在世界范围内得到了广泛的研究和发展。自旋相关隧道器件预计将在两年内在传感器、隔离器和存储器中实现商业化。由于隧道势垒的标称厚度约为1nm，并且其界面具有两个铁磁层，因此仅靠实验方法来开发新结是低效的。在制造过程中，迫切需要从现实建模中获得指导，本项目是专门为满足这一需求而设计的。我们将建立真实的原子模型，并选择适当的实验来证明这种综合方法的可行性。磁随机存取存储器用于可重新编程逻辑，读头，通用磁场传感器和电隔离器，是电子存储行业的重要组成部分。它们具有应用于其他微电子器件的潜力，其中薄层和接口至关重要。

This Small Business Technology Transfer Phase I Program will demonstrate the feasibility of model-guided approach for developing spin dependent tunnel junctions in magnetoelectronic devices. Spin dependent tunnel junctions are at the forefront of nanotechnology that is under intensive research and development worldwide. Spin dependent tunnel devices are expected to be commercialized in about two years in sensor, isolator, and memory. Due to the unique requirements of the tunnel barrier with a nominal thickness of ~1nm and its interfaces with two ferromagnetic layers, an experimental approach by itself is inefficient in developing new junctions. There is a critical need for guidance from a realistic modeling in the fabrication processing, and this project is specifically designed to fulfill this need. Realistic atomistic modeling will be established and experiments will be judicially chosen to demonstrate the feasibility of this integrated approach. Magneto-random access memories are used in reprogrammable logic, read heads, generic magnetic field sensors, and galvanic isolators and are important components for the electronic storage industry. They have the potential to be applied in other microelectronic devices where thin layers and interfaces are critical.