SBIR Phase II: Sub-Nanosecond Spin Dependent Tunneling Devices

SBIR 第二阶段：亚纳秒自旋相关隧道器件

• 批准号: 0091564
• 负责人: Dexin Wang
• 金额: $ 50万
• 依托单位: NVE CORPORATION
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-02-15 至 2004-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0091564&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Sub; Nanosecond

This Small Business Innovation Research (SBIR) Phase II project will develop prototype Spin Dependent Tunneling (SDT) devices by combining high-speed magnetic thin films and low-RC SDT structures achieved in Phase I. These devices will be fabricated using standard microelectronic photolithography and packaging techniques, suitable for volume production. Sub-nanosecond switching will be demonstrated with these devices which are integrated with integrated circuit (IC) electronics. Fast IC electronics will be implemented using low voltage differential signaling (LVDS). SDT devices exhibit large signal, low switching field, and high resistance, which lead to high sensitivity, low power consumption, and small size and weight, when compared with giant magnetoresistive (GMR) devices. Fast SDT devices will require improvements in both magnetic speed and electronic speed, while existing attractive static properties need to be maintained. Phase II is expected to produce integrated SDT devices with state-of-the-art properties and switching time less than one nanosecond.Potential commercial applications for this research are expected in high-speed isolators, high-speed magnetic field and current sensing devices, fast magnetic random access memories (MRAM), reconfigurable magnetic logic, read heads, and gigahertz (GHz) inductor/transformers, as well as their derivative products.

该小型企业创新研究（SBIR）第二阶段项目将通过结合第一阶段实现的高速磁性薄膜和低RC SDT结构来开发原型自旋相关隧道（SDT）器件。 这些器件将使用标准的微电子光刻和封装技术制造，适合批量生产。 亚纳秒开关将与这些设备，这是集成电路（IC）电子集成演示。快速IC电子器件将使用低压差分信号（LVDS）实现。 与巨磁阻（GMR）器件相比，SDT器件具有大信号、低开关场、高电阻等优点，因而具有灵敏度高、功耗低、体积小、重量轻等优点。 快速SDT器件需要提高磁速和电子速，同时需要保持现有的有吸引力的静态特性。 第二阶段预计将生产具有最先进性能和开关时间小于1纳秒的集成SDT器件，该研究的潜在商业应用预计将在高速隔离器，高速磁场和电流传感器件，快速磁随机存取存储器（MRAM），可重构磁逻辑，读磁头和千兆赫（GHz）电感器/变压器，以及它们的衍生产品。