Magnetic and Calorimetric Studies on the New Class of Layered III-IV Diluted Magnetic Semiconductors

[9972196pekarek]本项目研究新型层状III-VI稀释磁性半导体（DMS）的磁性和量热特性。III-VI半导体以其显著的非线性光学特性而闻名。对GaMnSe和GaMnS晶体的初步磁测量显示，其行为与之前在大量研究的II-VI和III-V DMS材料中观察到的截然不同。使III-VI DMS独特的两个关键特征是它们的二维层状结构（通过层之间的范德华键结合在一起）和相邻过渡金属离子直接成键的潜力。本研究计划的目标是为揭示一些观察到的新磁效应提供关键信息，并启动对III-VI半导体宿主中其他过渡金属离子的研究。本研究涉及本科生和一名当地高中教师，将影响受过技术训练的本科生的质量和高中学生进入科技领域的动机。这个项目研究一类具有光电子应用潜力的新材料。本科生和一名当地高中教师将帮助使用佛罗里达州塔拉哈西国家强磁场实验室最先进的设备进行测量。他们将学习许多重要的实验技术，同时研究一类新的和潜在的重要磁性半导体

9972196PekarekThis project deals with the magnetic and calorimetric properties of the new class of layered III-VI Diluted Magnetic Semiconductors (DMS). The III-VI semiconductors are known for their remarkable nonlinear optical properties. Preliminary magnetic measurements on GaMnSe and GaMnS crystals have revealed behavior strikingly different from that observed previously in the heavily studied II-VI and III-V DMS materials. Two key features that make the III-VI DMS unique is their two-dimensional layered structure (held together by van der Waals bonding between layers) and the potential for direct bonding of neighboring transition metal ions. The goal of this research program is to provide key information for unraveling some of the observed novel magnetic effects and to initiate an investigation of other transition metal ions in the III-VI semiconductor hosts. The research involves undergraduate students as well as a local high school teacher and will impact both the quality of technically trained undergraduates and the motivation of students at the high school level to enter scientific or technical fields. %%%This project deals with a new class of materials with potential photoelectronic applications. Undergraduate students and a local high school teacher will help make measurements using the state-of-the-art facilities at the National High Magnetic Field Laboratory in Tallahassee, Florida. They will learn a number of important experimental techniques while investigating a new and potentially important class of magnetic semiconductors.***