Magnetic and Calorimetric Studies on the New Class of Layered III-IV Diluted Magnetic Semiconductors

新型层状 III-IV 稀磁半导体的磁性和量热研究

• 批准号: 9972196
• 负责人: Thomas Pekarek
• 金额: $ 11.99万
• 依托单位: University of North Florida
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-06-01 至 2003-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9972196&HistoricalAwards=false
• 关键词: Magnetic; Calorimetric; Studies; New; Class

9972196PekarekThis project deals with the magnetic and calorimetric properties of the new class of layered III-VI Diluted Magnetic Semiconductors (DMS). The III-VI semiconductors are known for their remarkable nonlinear optical properties. Preliminary magnetic measurements on GaMnSe and GaMnS crystals have revealed behavior strikingly different from that observed previously in the heavily studied II-VI and III-V DMS materials. Two key features that make the III-VI DMS unique is their two-dimensional layered structure (held together by van der Waals bonding between layers) and the potential for direct bonding of neighboring transition metal ions. The goal of this research program is to provide key information for unraveling some of the observed novel magnetic effects and to initiate an investigation of other transition metal ions in the III-VI semiconductor hosts. The research involves undergraduate students as well as a local high school teacher and will impact both the quality of technically trained undergraduates and the motivation of students at the high school level to enter scientific or technical fields. %%%This project deals with a new class of materials with potential photoelectronic applications. Undergraduate students and a local high school teacher will help make measurements using the state-of-the-art facilities at the National High Magnetic Field Laboratory in Tallahassee, Florida. They will learn a number of important experimental techniques while investigating a new and potentially important class of magnetic semiconductors.***

9972196 Pekare本项目研究新型层状III-VI稀磁半导体(DMS)的磁性和量热特性。III-VI半导体以其显著的非线性光学特性而闻名。在GaMnSe和GaMnS晶体上的初步磁性测量显示了与以前在深入研究II-VI和III-V DMS材料中观察到的行为显著不同的行为。使III-VI DMS独一无二的两个关键特征是它们的二维层状结构(通过层之间的范德华键合在一起)和相邻过渡金属离子直接键合的可能性。这项研究计划的目的是为解开一些观察到的新的磁效应提供关键信息，并启动对III-VI半导体主体中其他过渡金属离子的研究。这项研究涉及本科生和当地一名高中教师，将影响受过技术培训的本科生的质量和高中学生进入科学或技术领域的动机。这个项目涉及一类具有潜在光电子应用的新材料。本科生和一名当地高中教师将帮助使用佛罗里达州塔拉哈西国家高磁场实验室的最先进设施进行测量。他们将在研究一类新的潜在重要的磁性半导体时学习一些重要的实验技术。*