RUI: Exploration the New Class of Layered III-VI Diluted Magnetic Semiconductors and Their Magnetic Properties

RUI:探索新型层状 III-VI 稀磁半导体及其磁性

基本信息

  • 批准号:
    0305653
  • 负责人:
  • 金额:
    $ 16.34万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2003
  • 资助国家:
    美国
  • 起止时间:
    2003-07-01 至 2007-06-30
  • 项目状态:
    已结题

项目摘要

These new layered III-VI Diluted Magnetic Semiconductor (DMS)systems complement the enormous progress in the II-VI DMS and the more recent efforts in the Mn doped III-V DMS systems. The III-VI DMS Ga1-xMnxSe exhibits a strong red emission at 1.804 eV attributed to the Mn. GaSe itself is known for its remarkable nonlinear optical properties and is a promising material for photoelectronic applications. Ga1-xMnxS and In1-xMnxS will be investigated in detail followed by a study of Ga1-xMnxSe, In1-xMnxSe and a survey of Fe and Co based materials. Preliminary non-linear magnetization scaling analysis on Ga1-xMnxS strongly suggests there is a true spin-glass transition at 11 K. This important result would add a whole new class of spin-glass materials and raise interesting questions of the effect of spatial dimensionality on the spin-glass transition in this system. In terms of broader impacts, this project involves mentoring 3 undergraduate students each year. The research group currently includes 1 female and 1 Hispanic student (currently underrepresented groups in physics). This project also allows this undergraduate institution the honor of sharing a state-of-the-art SQUID magnetometer with research groups at two graduate and one undergraduate institutions.Non-Technical AbstractThese new layered III-VI Diluted Magnetic Semiconductor (DMS) systems complement the enormous progress made in systems based on other semiconductor hosts. The III-VI DMS Ga1-xMnxSe exhibits a strong red emission attributed to the Mn. GaSe itself is known for its remarkable nonlinear optical properties and is a promising material for photoelectronic applications. Several III-VI DMS will be investigated to further explore the magnetic properties of this newest class of DMS based on the layeredIII-VI semiconductor hosts. In terms of broader impacts, this project involves mentoring 3 undergraduate students each year. The research group currently includes 1 female and 1 Hispanic student (currentlyunderrepresented groups in physics). This project also allows this undergraduate institution the honor of sharing a state-of-the-art SQUID magnetometer with research groups at two graduate and one undergraduateinstitutions.
这些新的分层III-VI稀磁半导体(DMS)系统补充了II-VI DMS中的巨大进展和Mn掺杂的III-V DMS系统中的更近期的努力。III-VI DMS Ga 1-xMnxSe在1.804 eV处表现出归因于Mn的强红光发射。GaSe本身以其显著的非线性光学性质而闻名,是一种有前途的光电应用材料。Ga_(1-x)Mn_xS和In_(1-x)Mn_xS将被详细研究,随后将研究Ga_(1-x)Mn_xSe和In_(1-x)Mn_xSe,并对基于Fe和Co的材料进行调查。初步的非线性磁化标度分析表明,Ga 1-xMnxS在11 K下存在真正的自旋玻璃转变。这一重要结果将增加一个全新的自旋玻璃材料类别,并提出空间维度对该系统中自旋玻璃转变的影响的有趣问题。就更广泛的影响而言,该项目每年涉及指导3名本科生。该研究小组目前包括1名女性和1名西班牙裔学生(目前在物理学中代表性不足的群体)。这个项目也使这个本科院校的荣誉共享国家的最先进的SQUID磁强计与研究小组在两个研究生和一个本科院校。非技术摘要这些新的分层III-VI稀磁半导体(DMS)系统补充了基于其他半导体主机的系统中取得的巨大进展。 III-VI DMS Ga 1-xMnxSe表现出归因于Mn的强红光发射。 GaSe本身以其显著的非线性光学性质而闻名,是一种有前途的光电应用材料。 几个III-VI DMS将进行调查,以进一步探索这类最新的DMS的层状III-VI半导体主机的基础上的磁性能。 就更广泛的影响而言,该项目每年涉及指导3名本科生。 该研究小组目前包括1名女性和1名西班牙裔学生(目前在物理学中代表性不足的群体)。 这个项目也使这个本科机构的荣誉分享国家的最先进的SQUID磁强计与研究小组在两个研究生和一个本科院校。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)

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Thomas Pekarek其他文献

Magnetic impurity bands in Ga1−xMnxS : Towards understanding the anomalous spin-glass transition
Ga1−xMnxS 中的磁性杂质带
  • DOI:
    10.1103/physrevb.98.155206
  • 发表时间:
    2018
  • 期刊:
  • 影响因子:
    3.7
  • 作者:
    Thomas Pekarek;M. C. Massey;I. Manuel;P. Edwards;D. Parker;J. T. Haraldsen
  • 通讯作者:
    J. T. Haraldsen

Thomas Pekarek的其他文献

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{{ truncateString('Thomas Pekarek', 18)}}的其他基金

MRI: Acquisition of an AC Susceptibility Measurement System for Interdisciplinary Materials Research and STEM Education
MRI:获取交流磁化率测量系统,用于跨学科材料研究和 STEM 教育
  • 批准号:
    1626332
  • 财政年份:
    2016
  • 资助金额:
    $ 16.34万
  • 项目类别:
    Standard Grant
RUI: Exploration of the New Class of Layered III-VI Diluted Magnetic Semiconductors
RUI:新型层状 III-VI 稀磁半导体的探索
  • 批准号:
    0706593
  • 财政年份:
    2007
  • 资助金额:
    $ 16.34万
  • 项目类别:
    Standard Grant
MRI: Acquisition of a Physical Property Measurement System for Research and Education
MRI:获取用于研究和教育的物理特性测量系统
  • 批准号:
    0619702
  • 财政年份:
    2006
  • 资助金额:
    $ 16.34万
  • 项目类别:
    Standard Grant
Magnetic and Calorimetric Studies on the New Class of Layered III-IV Diluted Magnetic Semiconductors
新型层状 III-IV 稀磁半导体的磁性和量热研究
  • 批准号:
    9972196
  • 财政年份:
    1999
  • 资助金额:
    $ 16.34万
  • 项目类别:
    Continuing Grant
Aquisition of a SQUID Magnetometer for Research and Education
采购用于研究和教育的 SQUID 磁力计
  • 批准号:
    9975887
  • 财政年份:
    1999
  • 资助金额:
    $ 16.34万
  • 项目类别:
    Standard Grant

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