Integrated Active Antenna Arrays for Millimeter Wave Wireless Communications

用于毫米波无线通信的集成有源天线阵列

• 批准号: 9979282
• 负责人: Ramakrishna Janaswamy
• 金额: $ 35.94万
• 依托单位: University of Massachusetts Amherst
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-09-15 至 2004-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9979282&HistoricalAwards=false
• 关键词: Integrated; Active; Antenna; Arrays; Millimeter

9979282PozarWhile the vast majority of commercial wireless systems deployed to date are characterized by the use of frequencies below 2 GHz and the use of low-gain antennas, many of the proposed high-speed wireless data networks of the future will use millimeter wave frequencies and high gain antennas. Examples include point-to-point radios operating at 23 and 38 GHz (largely used for cellular and PCS base station backhaul traffic), local multi-point distribution systems (LMDS) operating at 28 GHz, and ground terminals operating at 20 and 30 GHz for the Celestri and Teledesic low-earth orbit (LEO) satellite systems. Although micro-strip antenna technology has matured considerably over the last 15 years, a persistent problem has been the fact that micro-strip feed line losses increase exponentially with antenna size and with frequency, so that it is impossible to construct an efficient high-gain micro-strip array at millimeter wave frequencies using a coplanar micro-strip feed network. The research plan described here proposes to address this and related fundamental problems associated with millimeter wave wireless systems by studying the integration of as much of the critical antenna and front-end microwave electronics as possible. We will make use of recent advances in silicon machining, wafer bonding and polymer films to create structures that were not possible just a few years ago. In addition, by considering the antenna and RF electronics as a whole unit, we will be able to greatly reduce cost by focusing on processing only the component characteristics that are necessary for high efficiency arrays.A three-year research effort is proposed to carry out experimental and theoretical investigations of millimeter wave antennas and RF front-end circuitry for future wireless data networks and systems. Both monolithic and semi-hybrid approaches will be studied. One component of the research involves the development of HBT power amplifiers with specific geometry, configuration, and characteristics that will be favorable for monolithic integration with micro-strip antenna elements on GaAs substrates to minimize feed losses at millimeter wave frequencies. Using state-of-the-art MOCVD techniques, we will develop optimum HBT structures with sufficient gain in the millimeter wave regime without the requirement of nano-fabrication technology. In fabrication of the HBTs, we will collaborate with researchers at the Raytheon Advanced Device Center where state-of-the-art millimeter wave devices and integrated circuits are presently being developed. We will work with Raytheon researchers on the device design (both epitaxial structure and layout), process sequences, and specific process steps. We believe their experience and expertise will significantly enhance and accelerate our development of HBT technology for this program. Graduate students involved will also benefit greatly from this interaction with our industrial partners.***

尽管迄今为止部署的绝大多数商用无线系统的特点是使用低于2 GHz的频率和使用低增益天线，但未来提出的许多高速无线数据网络将使用毫米波频率和高增益天线。例子包括工作在23和38 GHz的点对点无线电（主要用于蜂窝和PCS基站回程业务）、工作在28 GHz的本地多点分配系统（LMDS）以及用于Celestri和Teledesic低地球轨道（LEO）卫星系统的工作在20和30 GHz的地面终端。尽管微带天线技术在过去的15年中已经相当成熟，但是一直存在的问题是微带馈线损耗随着天线尺寸和频率呈指数增加的事实，使得不可能使用共面微带馈电网络在毫米波频率下构造有效的高增益微带阵列。这里描述的研究计划提出，通过研究尽可能多的关键天线和前端微波电子器件的集成来解决与毫米波无线系统相关的这一问题和相关的基本问题。我们将利用硅加工、晶片键合和聚合物薄膜方面的最新进展，创造出几年前还不可能实现的结构。此外，通过将天线和射频电子器件作为一个整体来考虑，我们将能够通过只专注于处理高效率阵列所需的组件特性来大大降低成本。提出了一项为期三年的研究工作，对未来无线数据网络和系统的毫米波天线和射频前端电路进行实验和理论研究。将研究单片和半混合方法。该研究的一个组成部分涉及HBT功率放大器的开发，具有特定的几何形状，配置和特性，这将有利于与GaAs衬底上的微带天线元件单片集成，以最大限度地减少毫米波频率下的馈电损耗。利用最先进的MOCVD技术，我们将开发出最佳的HBT结构，在毫米波范围内具有足够的增益，而不需要纳米制造技术。在HBT的制造过程中，我们将与雷神先进器件中心的研究人员合作，该中心目前正在开发最先进的毫米波器件和集成电路。我们将与雷神公司的研究人员合作进行器件设计（包括外延结构和布局）、工艺顺序和具体工艺步骤。我们相信，他们的经验和专业知识将大大提高和加速我们的HBT技术的发展，为这一计划。参与的研究生也将从与我们的工业合作伙伴的互动中受益匪浅。*