SBIR PHASE I: Integrated Gas Phase - Surface Reaction Simulator for Plasma Etch and Chemical Vapor Deposition Process Development

SBIR PHASE I：用于等离子蚀刻和化学气相沉积工艺开发的集成气相-表面反应模拟器

• 批准号: 0060283
• 负责人: Ning Zhou
• 金额: $ 9.99万
• 依托单位: CFD RESEARCH CORPORATION
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-01-01 至 2001-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0060283&HistoricalAwards=false
• 关键词: SBIR; PHASE; Integrated; Gas; Phase

This Small Business Innovation Research (SBIR) Phase I project will develop state-of-the-artcomputational models to accurately simulate the next generation of plasma-etch tools for SiO2 and low-k dielectric materials. Modeling tools necessary to address these challenges are not currently available, and will be developed by two companies specializing in chamber scale multi-dimensional and surface reaction chemistry simulations. The Phase I effort will focus on plasma sheath model (unified plasma sheath model of Riley/Bose) implementation, software integration and development of new ion assisted reaction formalism. Feasibility of the proposed integrated simulator will be demonstrated utilizing simple C2F6 plasma mechanism of CFDRC and complex C2F6 plasma etch mechanism developed by SEMATECH. The commercial availability of the proposed capability will allow process engineers to design better processes and identify equipment/process deficiencies before they are performed on a R&D or production scale. Implementation of the proposed computational innovation will produce major impact on technology readiness, and affordability through better process chamber designs and higher throughput.

该小型企业创新研究（SBIR）第一阶段项目将开发最先进的计算模型，以准确模拟SiO2和低k电介质材料的下一代等离子体蚀刻工具。 解决这些挑战所需的建模工具目前还不可用，将由两家专门从事腔室规模多维和表面反应化学模拟的公司开发。 第一阶段的工作将集中在等离子体鞘模型（统一等离子体鞘模型的Riley/Bose）的实现，软件集成和新的离子辅助反应形式主义的发展。利用CFDRC的简单C2 F6等离子体机制和SEMATECH开发的复杂C2 F6等离子体刻蚀机制，证明了所提出的集成模拟器的可行性。拟议能力的商业可用性将使工艺工程师能够设计更好的工艺，并在进行研发或生产规模之前确定设备/工艺缺陷。实施拟议的计算创新将产生重大影响的技术准备，并通过更好的处理室设计和更高的吞吐量的可负担性。