High Performance Capacitors and Nonvolatile Memories based on Langmuir-Blodgett Films of Ferroelectric Polymers

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The purpose of this work is to demonstrate and evaluate two device concepts incorporatingferroelectric polymer Langmuir-Blodgett films: high-performance capacitors andnonvolatile data storage elements. Both device concepts take advantage of uniquedielectric and ferroelectric properties of Langmuir-Blodgett films of polyvinylidenefluoride and its copolymers. The high-performance capacitors benefit from the recorddielectric strength of over 3 GV/m in the highly uniform films as thin as 1 nm. The energystorage density of multilayer capacitors made from the ferroelectric polymer LB films isexpected to reach 200 to 1000 Joules per cubic centimeter. The fast switch speed of 2microseconds and the ability to deposit the films on a variety of substrates permits thefabrication of inexpensive of hybrid nonvolatile data storage devices composed of aferroelectric polymer LB film deposited directly on an array of planar field-effecttransistor. Though each device concept may independently prove suitable for practicalapplication, they may prove particularly useful together in combination with conventionalintegrated circuits for the production of nonvolatile random-access memories, caches, andarchival storage. This project is a natural spin-off of five years of study anddevelopment of the only reported two-dimensional ferroelectrics, research conductedjointly by the PI's group in collaboration with two groups at the Institute ofCrystallography in Moscow.