High Performance Capacitors and Nonvolatile Memories based on Langmuir-Blodgett Films of Ferroelectric Polymers

基于铁电聚合物 Langmuir-Blodgett 薄膜的高性能电容器和非易失性存储器

• 批准号: 0070245
• 负责人: Stephen Ducharme
• 金额: $ 17.46万
• 依托单位: University of Nebraska-Lincoln
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-06-01 至 2003-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0070245&HistoricalAwards=false
• 关键词: Performance; Capacitors; Nonvolatile; Memories; based

The purpose of this work is to demonstrate and evaluate two device concepts incorporatingferroelectric polymer Langmuir-Blodgett films: high-performance capacitors andnonvolatile data storage elements. Both device concepts take advantage of uniquedielectric and ferroelectric properties of Langmuir-Blodgett films of polyvinylidenefluoride and its copolymers. The high-performance capacitors benefit from the recorddielectric strength of over 3 GV/m in the highly uniform films as thin as 1 nm. The energystorage density of multilayer capacitors made from the ferroelectric polymer LB films isexpected to reach 200 to 1000 Joules per cubic centimeter. The fast switch speed of 2microseconds and the ability to deposit the films on a variety of substrates permits thefabrication of inexpensive of hybrid nonvolatile data storage devices composed of aferroelectric polymer LB film deposited directly on an array of planar field-effecttransistor. Though each device concept may independently prove suitable for practicalapplication, they may prove particularly useful together in combination with conventionalintegrated circuits for the production of nonvolatile random-access memories, caches, andarchival storage. This project is a natural spin-off of five years of study anddevelopment of the only reported two-dimensional ferroelectrics, research conductedjointly by the PI's group in collaboration with two groups at the Institute ofCrystallography in Moscow.

本工作的目的是演示和评估两种器件概念，包括铁电聚合物LB膜：高性能电容器和非易失性数据存储元件。这两种器件概念都利用了聚偏二氟乙烯及其共聚物的Langmuir-Blodgett薄膜的独特介电和铁电特性。高性能电容器得益于厚度为1 nm的高度均匀薄膜中超过3 GV/m的介电强度。由铁电聚合物LB膜制成的多层电容器的储能密度有望达到每立方厘米200至1000焦耳。2微秒的快速开关速度和在各种衬底上存款薄膜的能力，使得可以制造由铁电聚合物LB膜直接淀积在平面场效应晶体管阵列上构成的廉价的混合非易失性数据存储器件。虽然每种器件的概念可能独立地证明适合于实际应用，但它们与传统的集成电路结合在一起可能证明特别有用，用于生产非易失性随机存取存储器、高速缓存和档案存储。这个项目是一个自然的副产品的五年的研究和发展的唯一报告的二维铁电体，研究共同进行的PI的小组与两个小组合作，在晶体学研究所在莫斯科。