Strain-Compensating Layers in Stacked Quantum Dot Active Regions

堆叠量子点有源区域中的应变补偿层

• 批准号: 0074528
• 负责人: Diana Huffaker
• 金额: $ 7.33万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-08-01 至 2001-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0074528&HistoricalAwards=false
• 关键词: Strain; Compensating; Layers; Stacked; Quantum

0074528HuffakerRapid advances have been made in quantum dot (QD) crystal growth and device design to produce lower threshold current density and improved temperature stability in QD semiconductor lasers compared to quantum well (QW) lasers. It is also becoming evident that the QD will have technologically important applications such as extended wavelength (1.0 mm- 1.3 mm) operation of GaAs-based lasers and lateral electronic carrier confinement important for microcavity applications such as low power VCSELs and photonic bandgap defect lasers. Receiving increased attention are lasers and photodetectors operating in the far infrared based on intersubband QD transitions. One of the problems in advancing QD technology, especially at 1.3 mm, is the small gain in the QD active region compared to the QW. A solution to this problem is to stack the QD layers; however, there is a severe limitation on the amount of strained material which can be utilized in the epitaxy.This project will study the development of stacked quantum dot active regions which include strain compensating layers to balance the accumulated strain of the QD stacks. The use of strain-compensating layers is well known in the field of strained multiple quantum well lasers, however it has not yet been investigated for stacked quantum dot active regions. This presents a great opportunity for new experiments in both materials and devices. The project includes the crystal growth of multiple compressively strained InGaAs/GaAs quantum dot active layers separated by tensile strained InGa(As)P layers. The active regions will be studied through X-Ray diffraction and photoluminescence to optimize material parameters. Although the work is applicable to all types of QDs formed by strained layer epitaxy, this project will focus primarily on QDs which emit at the 1.3 mm wavelength. These active regions are applicable to monolithic 1.3 mm GaAs-based VCSELs which are important for signal transmission through silica fibers.

在量子点（QD）晶体生长和器件设计方面已经取得了快速的进展，与量子阱（QW）激光器相比，在QD半导体激光器中产生更低的阈值电流密度和改进的温度稳定性。 同样变得明显的是，QD将具有技术上重要的应用，例如GaAs基激光器的扩展波长（1.0 mm- 1.3 mm）操作和对于微腔应用（例如低功率VCSEL和光子带隙缺陷激光器）重要的横向电子载流子限制。 基于量子点跃迁的远红外激光器和光电探测器受到越来越多的关注。 推进QD技术的问题之一，特别是在1.3 mm处，是与QW相比QD有源区中的小增益。解决这个问题的一个方法是堆叠量子点层。然而，在外延中可以利用的应变材料的量受到严格的限制。本项目将研究开发堆叠量子点有源区，其中包括应变补偿层，以平衡量子点堆叠的累积应变。 应变补偿层的使用在应变多量子阱激光器领域中是公知的，然而，尚未针对堆叠的量子点有源区进行研究。 这为材料和设备的新实验提供了一个很好的机会。 该项目包括多个压缩应变InGaAs/GaAs量子点有源层的晶体生长由拉伸应变InGa（As）P层分离。 将通过X射线衍射和光致发光研究有源区，以优化材料参数。 虽然这项工作适用于所有类型的量子点形成的应变层外延，本项目将主要集中在量子点发射在1.3毫米波长。 这些有源区适用于单片1.3 mm GaAs基VCSEL，这对于通过石英光纤的信号传输是重要的。