Three-Dimensional Plasmonically Enhanced Nanopillar Photodetectors: An Integrative Design Approach
三维等离子体增强纳米柱光电探测器:一种集成设计方法
基本信息
- 批准号:1202591
- 负责人:
- 金额:$ 38万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2012
- 资助国家:美国
- 起止时间:2012-05-01 至 2015-04-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Objective: This project is an integrated approach for design and development of plasmonically-enhanced photodetectors (PEPDs). A unique 3D plasmonic grating self-aligned to a patterned III-V nanopillar array enables enhanced efficiency along with speed appropriate for high-bandwidth transceiver integration on a Si CMOS platform. Expected device performance includes quantum efficiencies 70 % and modulation rates 50 GHz. Intellectual merit: The innovative component is the unique three-dimensional geometry enabled by the vertical nanopillar-based format to circumvent two major limitations of planar plasmonics and nanostructures. This plasmonic grating provides significantly increased optical coupling efficiency resulting from tightly-confined photonic hot-spots compared to the conventional planar configuration. In addition, these hot spots can be physically placed to overlap the carrier absorbing region rather than the lossy metal grating. A holisticBroader Impacts: This research project offers substantial opportunities for student participation at all levels including high-school, undergraduate and graduate/postdoctoral education and research experience. The project is linked to K-12 projects such as Technology Road Show which takes nano- and clean-energy experiments developed by graduate students into local high school science classes. A related program brings high school teachers on UCLA campus monthly to develop nano-related course work. Under represented minority students participate in these UCLA laboratories through targeted campus support of undergraduate and graduate programs.
目的:本计画为电浆增强型光侦测器之设计与发展提供一个整合的方法。自对准到图案化III-V纳米柱阵列的独特3D等离子体激元光栅实现了提高的效率,沿着适合于Si CMOS平台上的高带宽收发器集成的速度。 预期器件性能包括量子效率70%和调制速率50 GHz。 智力优点:创新的组成部分是独特的三维几何形状,由垂直纳米柱为基础的格式,以规避平面等离子体和纳米结构的两个主要限制。与传统的平面配置相比,该等离子体光栅提供了由紧密限制的光子热点引起的显著增加的光学耦合效率。 此外,这些热点可以物理地放置成与载流子吸收区域而不是有损金属光栅重叠。 整体性更广泛的影响:这个研究项目提供了大量的机会,学生参与各级包括高中,本科和研究生/博士后教育和研究经验。 该项目与K-12项目有关,例如技术路演,该项目将研究生开发的纳米和清洁能源实验纳入当地高中科学课程。 一个相关的项目每月将高中教师带到加州大学洛杉矶分校校园,开发与纳米相关的课程。少数民族学生通过对本科生和研究生课程的有针对性的校园支持参与这些UCLA实验室。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Diana Huffaker其他文献
Diana Huffaker的其他文献
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{{ truncateString('Diana Huffaker', 18)}}的其他基金
Hybrid quantum dot-nanowire heterostructures for deterministic biphoton quantum communications
用于确定性双光子量子通信的混合量子点-纳米线异质结构
- 批准号:
1810548 - 财政年份:2018
- 资助金额:
$ 38万 - 项目类别:
Standard Grant
Collaborative Research: Highly mismatched GaSb-GaAs thin film multijunction solar cells for high efficiency
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1509949 - 财政年份:2015
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$ 38万 - 项目类别:
Standard Grant
Growth and Predictive Modeling of InSb Nanopillars by Catalyst-Free Selective Area Epitaxy
无催化剂选择性区域外延生长 InSb 纳米柱的生长和预测模型
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1309137 - 财政年份:2013
- 资助金额:
$ 38万 - 项目类别:
Continuing Grant
EAGER: US-Ireland Femtojoule-per-bit Communications with Nanopillar Lasers on Si
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- 批准号:
1314253 - 财政年份:2013
- 资助金额:
$ 38万 - 项目类别:
Standard Grant
Atomic Modeling and Controlled Formation of III-V Nanopillars by Catalyst-Free Growth Mode
无催化剂生长模式的 III-V 纳米柱的原子建模和受控形成
- 批准号:
1007051 - 财政年份:2010
- 资助金额:
$ 38万 - 项目类别:
Continuing Grant
IGERT: Clean Energy for Green Industry at UCLA
IGERT:加州大学洛杉矶分校绿色工业的清洁能源
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0903720 - 财政年份:2009
- 资助金额:
$ 38万 - 项目类别:
Standard Grant
Collaborative Research: III-V Nanopillars Grown on Si Substrates
合作研究:在硅衬底上生长的 III-V 纳米柱
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0824273 - 财政年份:2008
- 资助金额:
$ 38万 - 项目类别:
Standard Grant
MRI: Acquisition of a Scanning Tunneling Microscope for Development and Analysis of Nanostructures
MRI:购买扫描隧道显微镜用于纳米结构的开发和分析
- 批准号:
0216171 - 财政年份:2002
- 资助金额:
$ 38万 - 项目类别:
Standard Grant
Strain-Compensating Layers in Stacked Quantum Dot Active Regions
堆叠量子点有源区域中的应变补偿层
- 批准号:
0074528 - 财政年份:2000
- 资助金额:
$ 38万 - 项目类别:
Standard Grant
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