Three-Dimensional Plasmonically Enhanced Nanopillar Photodetectors: An Integrative Design Approach
Three-Dimensional Plasmonically Enhanced Nanopillar Photodetectors: An Integrative Design Approach
批准号:
1202591
负责人:
Diana Huffaker
金额:
$38.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2012
资助国家:
美国
项目状态:
已结题
起止时间:
2012-05-01 至 2015-04-30
中文摘要
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英文摘要
Objective: This project is an integrated approach for design and development of plasmonically-enhanced photodetectors (PEPDs). A unique 3D plasmonic grating self-aligned to a patterned III-V nanopillar array enables enhanced efficiency along with speed appropriate for high-bandwidth transceiver integration on a Si CMOS platform. Expected device performance includes quantum efficiencies 70 % and modulation rates 50 GHz. Intellectual merit: The innovative component is the unique three-dimensional geometry enabled by the vertical nanopillar-based format to circumvent two major limitations of planar plasmonics and nanostructures. This plasmonic grating provides significantly increased optical coupling efficiency resulting from tightly-confined photonic hot-spots compared to the conventional planar configuration. In addition, these hot spots can be physically placed to overlap the carrier absorbing region rather than the lossy metal grating. A holisticBroader Impacts: This research project offers substantial opportunities for student participation at all levels including high-school, undergraduate and graduate/postdoctoral education and research experience. The project is linked to K-12 projects such as Technology Road Show which takes nano- and clean-energy experiments developed by graduate students into local high school science classes. A related program brings high school teachers on UCLA campus monthly to develop nano-related course work. Under represented minority students participate in these UCLA laboratories through targeted campus support of undergraduate and graduate programs.
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财政年份:2015
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财政年份:2013
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依托单位:
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财政年份:2013
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依托单位:
Atomic Modeling and Controlled Formation of III-V Nanopillars by Catalyst-Free Growth Mode
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批准号:1007051
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项目类别:Continuing Grant
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资助金额:$36.0万
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财政年份:2010
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负责人:Diana Huffaker
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财政年份:2009
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负责人:Diana Huffaker
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依托单位:
Collaborative Research: III-V Nanopillars Grown on Si Substrates
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财政年份:2008
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财政年份:2002
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负责人:Diana Huffaker
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依托单位:
Strain-Compensating Layers in Stacked Quantum Dot Active Regions
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批准号:0074528
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资助金额:$7.33万
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财政年份:2000
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负责人:Diana Huffaker
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依托单位:
Strain-Compensating Layers in Stacked Quantum Dot Active Regions
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批准号:0196558
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项目类别:Standard Grant
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资助金额:$7.33万
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财政年份:2000
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负责人:Diana Huffaker
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依托单位:
国内基金
海外基金
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批准号:--
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项目类别:合作创新研究团队
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资助金额:--
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批准年份:2024
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负责人:姚韬
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依托单位: